Fano effects in electron transport through an armchair graphene nanoribbon with one line defect

2013 ◽  
Vol 113 (23) ◽  
pp. 233701 ◽  
Author(s):  
Yu Han ◽  
Xiao-Yan Sui ◽  
Wei-Jiang Gong
Keyword(s):  
Electron Transport ◽  
Graphene Nanoribbon ◽  
Line Defect ◽  
Fano Effects ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

A graphene quantum dot realized by an armchair graphene nanoribbon with line defect

2013 ◽  
Vol 7 (8) ◽  
pp. 579-582 ◽  
Author(s):  
Xiao-Yan Sui ◽  
Zhi-Chao Li ◽  
Wei-Jiang Gong ◽  
Guo-Dong Yu ◽  
Xiao-Hui Chen
Keyword(s):  
Quantum Dot ◽  
Graphene Nanoribbon ◽  
Line Defect ◽  
Graphene Quantum Dot ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Line-defect–induced Fano interference in an armchair graphene nanoribbon

2013 ◽  
Vol 103 (1) ◽  
pp. 18003 ◽  
Author(s):  
W. J. Gong ◽  
X. Y. Sui ◽  
L. Zhu ◽  
G. D. Yu ◽  
X. H. Chen
Keyword(s):  
Graphene Nanoribbon ◽  
Line Defect ◽  
Fano Interference ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Spin-Dependent Electron Transport in an Armchair Graphene Nanoribbon Subject to Charge and Spin Biases

2013 ◽  
Vol 30 (1) ◽  
pp. 017201 ◽  
Author(s):  
Xiao-Wei Zhang ◽  
Hua Zhao ◽  
Tian Sang ◽  
Xiao-Chun Liu ◽  
Tuo Cai
Keyword(s):  
Electron Transport ◽  
Graphene Nanoribbon ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Electron Tunneling Current in an n-p-n Bipolar Transistor Based on Armchair Graphene Nanoribbon by Using Airy-Wavefunction Approach

2015 ◽  
Vol 1112 ◽  
pp. 80-84
Author(s):  
Fatimah A. Noor ◽  
Rifky Syariati ◽  
Endi Suhendi ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal
Keyword(s):  
Electron Tunneling ◽  
Tunneling Current ◽  
Band Gap Energy ◽  
Graphene Nanoribbon ◽  
Bipolar Transistor ◽  
Electron Effective Mass ◽  
Collector Voltage ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene ◽  
Emitter Voltage

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and the obtained transmittance is then used to obtain the tunneling current. The tunneling current is calculated for various variables such as base-emitter voltage, base-current voltage, and AGNR width. It is found that the tunneling current increases with increasing the base-emitter voltage or the base-collector voltage. This result is due to the lowered barrier height of the base region caused by the increase in the base-emitter voltage or the base-collector voltage. In addition, the tunneling current density increases with the width for narrow AGNR and, on the other hand, it decreases for wide AGNR. This finding might be due to the contributions of the band gap energy and the electron effective mass of AGNR which are inversely proportional to the AGNR width.

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