Acoustical-phonon and polaron mode-induced optical parametric amplification in transversely magnetized III–V semiconductors

In this paper, a detailed analytical investigation is made to study the acoustical-phonon (AP) and polaron mode-induced optical parametric amplification (OPA) in transversely magnetized III–V semiconductors. Making use of hydrodynamic model of (one component) semiconductor plasma and adopting the coupled mode approach, an explicit expression is obtained for the threshold pump electric field [Formula: see text] and gain coefficients [Formula: see text] of AP and polaron mode-induced OPA. Externally applied magnetostatic field [Formula: see text] and doping concentration [Formula: see text] are incorporated in terms of electron cyclotron frequency [Formula: see text] and plasma frequency [Formula: see text], respectively. The dependence of [Formula: see text] on wave number [Formula: see text], [Formula: see text] and [Formula: see text] and the dependence of [Formula: see text] on [Formula: see text], [Formula: see text] and pump electric field [Formula: see text] are explored. Numerical estimates made for [Formula: see text]-InSb-CO2 system suggest that the material parameters and externally applied magnetostatic field play an important role in reducing [Formula: see text] and enhancing [Formula: see text]. We find [Formula: see text] (when [Formula: see text]); though [Formula: see text] is smaller than [Formula: see text] under identical conditions. The formulation developed in this paper highlights the importance of Frohlich interaction in transversely magnetized III–V semiconductors for OPA and replaces the conventional idea of using high power pulsed lasers. The results obtained in this analysis suggest that by controlling the material parameters and externally applied magnetostatic field, the performance of acoustical and polaron mode-induced optical parametric amplifiers may be improved. It is expected that a cheaper efficient optical parametric amplifier can be fabricated using [Formula: see text]-InSb-CO2 system as the outcome of this research work.

Magnetotransport Study on Iron Doped Novel 2D Nanoribbons via Electron – Acoustical Phonon Interactions

The electron transport parameters such as electron energy relaxation rate and phonon limited electron resistivity for iron (transition metal) doped 2D nanoribbons of armchair graphene nanoribbon (aGNR) and h-boron nitride nanoribbon (h-BNNR) have been calculated via hot electron acoustical phonon interactions on the basis of acoustical deformation potential (ADP) coupling mechanism. We have performed the investigation for the lower concentration ([Formula: see text]%) of iron doping under the influence of externally applied magnetic field at low temperature to room temperature regime. The hot electron acoustical phonon relaxation rates are observed with electric field and under constant applied magnetic field. The doping of iron increases the electron energy relaxation rate with respect to their pristine counter parts. Moreover, the pristine h-BNNR exhibits less electron energy relaxation rate with respect to pristine aGNR. Upon applying magnetic field on Fe doped armchair GNR as well as Fe-doped h-BNNR the electron energy relaxation rate reduces down to a considerable extent with respect to their pristine counterparts. Moreover, under the impact of magnetic field, the acoustical phonon restricted electrical resistivity of Fe-doped GNR is considerably low compared to pristine GNR.

Comparison of Hot Electron Mobility in h-Boron Nitride Nanosheets and Graphene under Manganese Doping

The electron mobility is calculated for h-BN nanosheets (h-BNNSs) and graphene with and without doping of manganese at high electric fields via acoustical deformation potential (ADP) scattering mechanism and piezoelectric scattering (Polar Acoustical Phonon (PAP) mechanism at low temperatures. Calculation includes the variation of electron Fermi energy and effective mass with high electric fields and with variation of Mn concentrations. Comparison of mobility in both the cases of with and without doping is carried out. It is observed that the net electron mobility due to both ADP and PAP mechanisms in graphene is much larger than that for h-BNNS for both the cases of with and without doping of manganese at low temperatures.