Symmetry-dependent interfacial reconstruction to compensate polar discontinuity at perovskite oxide interfaces (LaAlO3/SrTiO3 and LaAlO3/CaTiO3)

2015 ◽  
Vol 106 (7) ◽  
pp. 071601 ◽  
Author(s):  
Joohwi Lee ◽  
Jong Kwon Choi ◽  
Seon Young Moon ◽  
Jaehong Park ◽  
Jin-Sang Kim ◽  
...  
Keyword(s):  
Perovskite Oxide ◽  
Oxide Interfaces

Band Alignment at Heteroepitaxial Perovskite Oxide Interfaces. Experiments, Methods, and Perspectives

2017 ◽  
Vol 4 (11) ◽  
pp. 1700144 ◽  
Author(s):  
Alessio Giampietri ◽  
Giovanni Drera ◽  
Luigi Sangaletti
Keyword(s):  
Band Alignment ◽  
Perovskite Oxide ◽  
Oxide Interfaces

scholarly journals Resistance Switching Effect at Perovskite-Oxide Interfaces

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (1) ◽  
pp. 9-14
Author(s):  
Akihito SAWA ◽  
Takeshi FUJII ◽  
Masashi KAWASAKI ◽  
Yoshinori TOKURA
Keyword(s):  
Resistance Switching ◽  
Perovskite Oxide ◽  
Switching Effect ◽  
Oxide Interfaces

Surface Photovoltage Spectroscopy for the Investigation of Perovskite Oxide Interfaces

2005 ◽  
Vol 902 ◽  
Author(s):  
Elke Beyreuther ◽  
Stefan Grafström ◽  
Christian Thiele ◽  
Kathrin Dörr ◽  
Lukas M. Eng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Perovskite Oxide ◽  
Surface Photovoltage ◽  
Epitaxial Thin Films ◽  
Trap States ◽  
Oxide Interfaces ◽  
X Ray ◽  
Surface Photovoltage Spectroscopy ◽  
Prepared State ◽  
Capacitive Method

AbstractIn the present study, we comparatively investigate the distribution of electronic interface states of three different perovskite oxide interfaces, formed by epitaxial thin films of La0.7Sr0.3MnO3 (LSMO), La0.7Ca0.3MnO3 (LCMO), and La0.7Ce0.3MnO3 (LCeMO) on SrTiO3(100) substrates, in the as-prepared state as well as after an annealing procedure. We find that annealing significantly reduces the number and density of interface trap states. Two different experimental realizations of the surface photovoltage spectroscopy (SPS) technique were employed: an approach based on X-ray photoelectron spectroscopy (XPS), as well as a capacitive method. The advantages and limitations of both methods are critically discussed.

Probing Electronic Structure Changes at Perovskite Oxide Interfaces Using Spatially Resolved EELS

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
L Fitting Kourkoutis ◽  
Y Hotta ◽  
T Susaki ◽  
N Nakagawa ◽  
HY Hwang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Perovskite Oxide ◽  
Oxide Interfaces ◽  
Spatially Resolved ◽  
Structure Changes

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

2011 ◽  
Vol 110 (5) ◽  
pp. 053707 ◽  
Author(s):  
T. Yamamoto ◽  
R. Yasuhara ◽  
I. Ohkubo ◽  
H. Kumigashira ◽  
M. Oshima
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide ◽  
Oxide Interfaces ◽  
Transition Layers

STRUCTURE OF METAL-OXIDE INTERFACES

1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi
Keyword(s):  
Metal Oxide ◽  
Oxide Interfaces ◽  
Structure Of Metal

METAL-OXIDE INTERFACES OBTAINED BY SELECTIVE CHEMICAL REDUCTION OF LAMELLAR OXIDE-OXIDE EUTECTIC STRUCTURES

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-781-C1-787
Author(s):  
B. BONVALOT ◽  
G. DHALENNE ◽  
F. MILLOT ◽  
A. REVCOLEVSCHI
Keyword(s):  
Metal Oxide ◽  
Chemical Reduction ◽  
Oxide Interfaces ◽  
Selective Chemical
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