Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

2011 ◽  
Vol 110 (5) ◽  
pp. 053707 ◽  
Author(s):  
T. Yamamoto ◽  
R. Yasuhara ◽  
I. Ohkubo ◽  
H. Kumigashira ◽  
M. Oshima
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide ◽  
Oxide Interfaces ◽  
Transition Layers

Band Alignment at Heteroepitaxial Perovskite Oxide Interfaces. Experiments, Methods, and Perspectives

2017 ◽  
Vol 4 (11) ◽  
pp. 1700144 ◽  
Author(s):  
Alessio Giampietri ◽  
Giovanni Drera ◽  
Luigi Sangaletti
Keyword(s):  
Band Alignment ◽  
Perovskite Oxide ◽  
Oxide Interfaces

Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers

2011 ◽  
Vol 470 ◽  
pp. 188-193 ◽  
Author(s):  
Koji Kita ◽  
Atsushi Eika ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Akira Toriumi
Keyword(s):  
Resistive Switching ◽  
Film Deposition ◽  
Bilayer Film ◽  
Film Properties ◽  
Oxide Interfaces ◽  
Crystalline Film ◽  
Bilayer Films ◽  
Switching Characteristics ◽  
Nio Films ◽  
Deposition Conditions

Two kinds of NiO films with different crystallinity were fabricated by controlling the film deposition conditions. The well-crystalline film showed resistive switching characteristics whereas the poorly-crystalline film did not. From I-V characteristics of the NiO bilayer film consisting of those two kinds of films, it was found that the initial characteristics significantly differed according to the bias polarity. The forming voltage became lower and had less variety when the well-crystalline side was positively-biased. These results suggest that the forming voltage and currents are controllable by modifying the film properties at the metal-oxide interfaces.

scholarly journals RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Complex Oxide ◽  
Perovskite Oxide ◽  
Ferroelectric Polarization ◽  
Oxide Heterostructures ◽  
Polarization Voltage ◽  
Data Memory ◽  
Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

2014 ◽  
Vol 24 (43) ◽  
pp. 6741-6750 ◽  
Author(s):  
Hussein Nili ◽  
Sumeet Walia ◽  
Sivacarendran Balendhran ◽  
Dmitri B. Strukov ◽  
Madhu Bhaskaran ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide

scholarly journals Field-induced resistive switching in metal-oxide interfaces

2004 ◽  
Vol 85 (2) ◽  
pp. 317-319 ◽  
Author(s):  
S. Tsui ◽  
A. Baikalov ◽  
J. Cmaidalka ◽  
Y. Y. Sun ◽  
Y. Q. Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Oxide Interfaces

scholarly journals Memristors: Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors (Adv. Funct. Mater. 43/2014)

2014 ◽  
Vol 24 (43) ◽  
pp. 6733-6733
Author(s):  
Hussein Nili ◽  
Sumeet Walia ◽  
Sivacarendran Balendhran ◽  
Dmitri B. Strukov ◽  
Madhu Bhaskaran ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide

scholarly journals Spatially extended nature of resistive switching in perovskite oxide thin films

2006 ◽  
Vol 89 (6) ◽  
pp. 063507 ◽  
Author(s):  
Xin Chen ◽  
NaiJuan Wu ◽  
John Strozier ◽  
Alex Ignatiev
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Perovskite Oxide ◽  
Oxide Thin Films ◽  
Spatially Extended ◽  
Perovskite Oxide Thin Films

scholarly journals Resistance Switching Effect at Perovskite-Oxide Interfaces

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (1) ◽  
pp. 9-14
Author(s):  
Akihito SAWA ◽  
Takeshi FUJII ◽  
Masashi KAWASAKI ◽  
Yoshinori TOKURA
Keyword(s):  
Resistance Switching ◽  
Perovskite Oxide ◽  
Switching Effect ◽  
Oxide Interfaces
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