scholarly journals Current-induced spin polarization in the isotropic k -cubed Rashba model: Theoretical study of p -doped semiconductor heterostructures and perovskite-oxide interfaces

2018 ◽  
Vol 97 (23) ◽  
Author(s):  
Ł. Karwacki ◽  
A. Dyrdał ◽  
J. Berakdar ◽  
J. Barnaś
2015 ◽  
Vol 15 (3) ◽  
pp. 278-283 ◽  
Author(s):  
D. Stornaiuolo ◽  
C. Cantoni ◽  
G. M. De Luca ◽  
R. Di Capua ◽  
E. Di. Gennaro ◽  
...  

2019 ◽  
Vol 100 (12) ◽  
Author(s):  
Yulin Gan ◽  
Yu Zhang ◽  
Dennis Valbjørn Christensen ◽  
Nini Pryds ◽  
Yunzhong Chen

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.


2017 ◽  
Vol 4 (11) ◽  
pp. 1700144 ◽  
Author(s):  
Alessio Giampietri ◽  
Giovanni Drera ◽  
Luigi Sangaletti

2006 ◽  
Vol 45 ◽  
pp. 2582-2587 ◽  
Author(s):  
Hui Bin Lu ◽  
K.J. Jin ◽  
Kun Zhao ◽  
Y.H. Huang ◽  
Meng He ◽  
...  

A series of all-perovskite oxide p-n heterojunctions (PNHs) as well as perovskite oxide and Si PNHs have been fabricated by a laser molecular-beam epitaxy. The good nonlinear and rectifying I-V characteristics in the PNHs, unusual and high sensitivity of positive magnetoresistance in low magnetic field in SrNbxTi1-xO3/La1-ySryMnO3 and La1-xSrxMnO3/Si PNHs, ps orders ultrafast photoelectric effect in La1-xSrxMnO3/Si PNHs, as well as ferroelectric property due to the interface enhancement in BaNb0.3Ti0.7O3/Si PNHs have been observed. It is expected that the further investigation on the PNHs could not only stimulate theoretical study on the mechanisms but also would open up new possibilities in the development and application of electrical devices.


1979 ◽  
Vol 43 (22) ◽  
pp. 1658-1661 ◽  
Author(s):  
K. -N. Huang ◽  
W. R. Johnson ◽  
K. T. Cheng

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