scholarly journals Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

2014 ◽  
Vol 105 (25) ◽  
pp. 252101 ◽  
Author(s):  
Xin-Hao Zhao ◽  
Michael J. DiNezza ◽  
Shi Liu ◽  
Calli M. Campbell ◽  
Yuan Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Bulk Carrier ◽  
Interface Recombination ◽  
Double Heterostructures ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides

2007 ◽  
Vol 91 (4) ◽  
pp. 041112 ◽  
Author(s):  
A. Trita ◽  
I. Cristiani ◽  
V. Degiorgio ◽  
D. Chrastina ◽  
H. von Känel
Keyword(s):  
Carrier Lifetime ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

MEASUREMENT OF THE LIFETIME OF PHOTO-GENERATED FREE CARRIERS IN SiGe WAVEGUIDES

2007 ◽  
Vol 16 (02) ◽  
pp. 207-216
Author(s):  
A. TRITA ◽  
I. CRISTIANI ◽  
V. DEGIORGIO ◽  
M. DÖBELI ◽  
D. CHRASTINA ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Layer Thickness ◽  
Carrier Lifetime ◽  
Planar Waveguides ◽  
Probe Technique ◽  
Free Carriers ◽  
Interface Recombination ◽  
Pump And Probe ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe technique, using an ultrashort 810 nm laser pulse and a CW 1.55 μm probe, as a function of layer thickness d and Ge concentration x. The measured lifetimes are in the range of 20-90 ns. The obtained interface recombination velocity S is a growing function of both d and x, taking values in the range from 300 to 4000 cm/s.

Sign in / Sign up

Export Citation Format

Share Document