Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures

A. van Geelen; R. A. J. Thomeer; L. J. Giling

doi:10.1063/1.114054

Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures

Applied Physics Letters ◽

10.1063/1.114054 ◽

1995 ◽

Vol 66 (4) ◽

pp. 454-456 ◽

Cited By ~ 7

Author(s):

A. van Geelen ◽

R. A. J. Thomeer ◽

L. J. Giling

Keyword(s):

Interface Recombination ◽

Double Heterostructures ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1−xTe double-heterostructures

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2016.7750047 ◽

2016 ◽

Author(s):

Xin-Hao Zhao ◽

Shi Liu ◽

Calli M. Campbell ◽

Yuan Zhao ◽

Maxwell B. Lassise ◽

...

Keyword(s):

Interface Recombination ◽

Double Heterostructures ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Interface recombination velocity and misfit strain in molecular‐beam epitaxy double heterostructures of GaAs/GaxIn1−xP(0.47

Journal of Applied Physics ◽

10.1063/1.328534 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6312-6315 ◽

Cited By ~ 5

Author(s):

G. B. Scott ◽

G. Duggan ◽

J. S. Roberts

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Misfit Strain ◽

Interface Recombination ◽

Double Heterostructures ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2015.7356225 ◽

2015 ◽

Author(s):

Shi Liu ◽

Xin-Hao Zhao ◽

Calli M. Campbell ◽

Maxwell B. Lassise ◽

Yuan Zhao ◽

...

Keyword(s):

Carrier Lifetime ◽

Interface Recombination ◽

Double Heterostructures ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Low Interface Recombination Velocity in GaAs-(Al, Ga)As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l761 ◽

1985 ◽

Vol 24 (Part 2, No. 9) ◽

pp. L761-L763 ◽

Cited By ~ 16

Author(s):

G. W.'t Hooft ◽

M. R. Leys ◽

F. Roozeboom

Keyword(s):

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Interface Recombination ◽

Double Heterostructures ◽

Metal Organic ◽

Organic Vapour ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.4904993 ◽

2014 ◽

Vol 105 (25) ◽

pp. 252101 ◽

Cited By ~ 37

Author(s):

Xin-Hao Zhao ◽

Michael J. DiNezza ◽

Shi Liu ◽

Calli M. Campbell ◽

Yuan Zhao ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Carrier Lifetime ◽

Bulk Carrier ◽

Interface Recombination ◽

Double Heterostructures ◽

Interface Recombination Velocity ◽

Recombination Velocity

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The influence of sodium on the molybdenum/Cu(In,Ga)Se2 interface recombination velocity, determined by time resolved photoluminescence

Applied Physics Letters ◽

10.1063/1.4928187 ◽

2015 ◽

Vol 107 (5) ◽

pp. 051601 ◽

Cited By ~ 10

Author(s):

Enrico Jarzembowski ◽

Frank Syrowatka ◽

Kai Kaufmann ◽

Wolfgang Fränzel ◽

Torsten Hölscher ◽

...

Keyword(s):

Time Resolved ◽

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity ◽

Time Resolved Photoluminescence

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Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures

Solid-State Electronics ◽

10.1016/0038-1101(90)90186-i ◽

1990 ◽

Vol 33 (6) ◽

pp. 733-736 ◽

Cited By ~ 6

Author(s):

J.M. Borrego ◽

S.K. Ghandhi

Keyword(s):

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity

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On the Si/SiO2 Interface Recombination Velocity

Insulating Films on Semiconductors ◽

10.1007/978-3-642-68247-6_7 ◽

1981 ◽

pp. 43-47

Author(s):

M. W. Hillen ◽

J. Holsbrink ◽

J. F. Verwey

Keyword(s):

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity

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High Mobility and Low Interface Recombination Velocity GaAs/Al/sub x/Ga/sub 1-x/As Heterointerfaces Grown by MOVPE

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664968 ◽

2005 ◽

Author(s):

T.F. Kuech ◽

D.J. Wolford ◽

G.D. Gilliland ◽

J.A. Bradley

Keyword(s):

High Mobility ◽

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Measurement of interface recombination velocity in (Pb,Sn)Te/PbTe double‐heterostructure laser diodes

Applied Physics Letters ◽

10.1063/1.90825 ◽

1979 ◽

Vol 34 (7) ◽

pp. 432-434 ◽

Cited By ~ 24

Author(s):

Dumrong Kasemset ◽

Clifton G. Fonstad

Keyword(s):

Laser Diodes ◽

Double Heterostructure ◽

Interface Recombination ◽

Heterostructure Laser ◽

Interface Recombination Velocity ◽

Recombination Velocity

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