Interface recombination velocity and misfit strain in molecular‐beam epitaxy double heterostructures of GaAs/GaxIn1−xP(0.47

1981 ◽  
Vol 52 (10) ◽  
pp. 6312-6315 ◽  
Author(s):  
G. B. Scott ◽  
G. Duggan ◽  
J. S. Roberts
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Misfit Strain ◽  
Interface Recombination ◽  
Double Heterostructures ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Passlack ◽  
M. Hong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beams ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
In Situ Deposition ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractWe have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

1983 ◽  
Vol 43 (6) ◽  
pp. 569-571 ◽  
Author(s):  
C. W. Tu ◽  
S. R. Forrest ◽  
W. D. Johnston
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructures

The influence of sodium on the molybdenum/Cu(In,Ga)Se2 interface recombination velocity, determined by time resolved photoluminescence

2015 ◽  
Vol 107 (5) ◽  
pp. 051601 ◽  
Author(s):  
Enrico Jarzembowski ◽  
Frank Syrowatka ◽  
Kai Kaufmann ◽  
Wolfgang Fränzel ◽  
Torsten Hölscher ◽  
...  
Keyword(s):  
Time Resolved ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity ◽  
Time Resolved Photoluminescence
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