Nondestructive measurement of minority‐carrier lifetime and surface/interface recombination velocity in compound semiconductors

Chih Hsin Wang; Arnost Neugroschel

doi:10.1063/1.354571

Nondestructive measurement of minority‐carrier lifetime and surface/interface recombination velocity in compound semiconductors

Journal of Applied Physics ◽

10.1063/1.354571 ◽

1993 ◽

Vol 74 (5) ◽

pp. 3257-3263 ◽

Cited By ~ 4

Author(s):

Chih Hsin Wang ◽

Arnost Neugroschel

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Compound Semiconductors ◽

Nondestructive Measurement ◽

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Determination of bulk minority‐carrier lifetime and surface/interface recombination velocity from photoluminescence decay of a semi‐infinite semiconductor slab

Journal of Applied Physics ◽

10.1063/1.337399 ◽

1986 ◽

Vol 60 (3) ◽

pp. 1065-1070 ◽

Cited By ~ 50

Author(s):

G. W. ‘t Hooft ◽

C. van Opdorp

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Interface Recombination ◽

Photoluminescence Decay ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides

Applied Physics Letters ◽

10.1063/1.2760133 ◽

2007 ◽

Vol 91 (4) ◽

pp. 041112 ◽

Cited By ~ 12

Author(s):

A. Trita ◽

I. Cristiani ◽

V. Degiorgio ◽

D. Chrastina ◽

H. von Känel

Keyword(s):

Carrier Lifetime ◽

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Measurement of minority-carrier lifetime and surface recombination velocity with a high spacial resolution

10.1109/iedm.1976.188983 ◽

1976 ◽

Author(s):

M. Watanabe ◽

G. Actor ◽

H.C. Gatos

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Surface Recombination ◽

Minority Carrier Lifetime ◽

Surface Recombination Velocity ◽

Recombination Velocity

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Experimental Investigations on the Influence of Surface and Interface Recombination on the Minority Carrier Lifetime in LPE-GaP :N, Si VPE-GaP:N, Te, and VPE-GaAs0.12P0.88:N, Te

phys stat sol (a) ◽

10.1002/pssa.2210960239 ◽

1986 ◽

Vol 96 (2) ◽

pp. 683-689

Author(s):

Elke Gehrke ◽

K. Wandel ◽

H. Weinert

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Experimental Investigations ◽

Surface And Interface ◽

Interface Recombination

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Determination of minority‐carrier lifetime and surface recombination velocity by optical‐beam‐induced‐current measurements at different light wavelengths

Journal of Applied Physics ◽

10.1063/1.344161 ◽

1989 ◽

Vol 66 (7) ◽

pp. 3060-3065 ◽

Cited By ~ 21

Author(s):

Th. Flohr ◽

R. Helbig

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Surface Recombination ◽

Minority Carrier Lifetime ◽

Optical Beam ◽

Surface Recombination Velocity ◽

Induced Current ◽

Recombination Velocity ◽

Optical Beam Induced Current

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Determination of effective surface recombination velocity and minority-carrier lifetime in high-efficiency Si solar cells

Vacuum ◽

10.1016/0042-207x(85)90245-3 ◽

1985 ◽

Vol 35 (8) ◽

pp. 340

Keyword(s):

High Efficiency ◽

Carrier Lifetime ◽

Minority Carrier ◽

Surface Recombination ◽

Minority Carrier Lifetime ◽

Surface Recombination Velocity ◽

Effective Surface ◽

Si Solar Cells ◽

Recombination Velocity

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Influence of grain boundary recombination velocity and grain size on the minority carrier lifetime in polycrystalline semiconductors

Solid State Communications ◽

10.1016/s0038-1098(85)80026-0 ◽

1985 ◽

Vol 56 (11) ◽

pp. 925-927 ◽

Cited By ~ 11

Author(s):

C.A. Dimitriadis

Keyword(s):

Grain Size ◽

Grain Boundary ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Recombination Velocity ◽

Polycrystalline Semiconductors

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Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence

IEEE Transactions on Electron Devices ◽

10.1109/16.83745 ◽

1991 ◽

Vol 38 (9) ◽

pp. 2169-2180 ◽

Cited By ~ 12

Author(s):

C.H. Wang ◽

A. Neugroschel

Keyword(s):

Frequency Domain ◽

Velocity Measurement ◽

Carrier Lifetime ◽

Minority Carrier ◽

Surface Recombination ◽

Minority Carrier Lifetime ◽

Surface Recombination Velocity ◽

Recombination Velocity

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Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe

IEEE Journal of Photovoltaics ◽

10.1109/jphotov.2014.2359738 ◽

2015 ◽

Vol 5 (1) ◽

pp. 366-371 ◽

Cited By ~ 40

Author(s):

Darius Kuciauskas ◽

Ana Kanevce ◽

Pat Dippo ◽

Shahram Seyedmohammadi ◽

Roger Malik

Keyword(s):

Single Crystal ◽

Carrier Lifetime ◽

Minority Carrier ◽

Surface Recombination ◽

Minority Carrier Lifetime ◽

Surface Recombination Velocity ◽

Recombination Velocity

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Determination of effective surface recombination velocity and minority‐carrier lifetime in high‐efficiency Si solar cells

Journal of Applied Physics ◽

10.1063/1.331693 ◽

1983 ◽

Vol 54 (1) ◽

pp. 238-247 ◽

Cited By ~ 41

Author(s):

B. H. Rose ◽

H. T. Weaver

Keyword(s):

High Efficiency ◽

Carrier Lifetime ◽

Minority Carrier ◽

Surface Recombination ◽

Minority Carrier Lifetime ◽

Surface Recombination Velocity ◽

Effective Surface ◽

Si Solar Cells ◽

Recombination Velocity

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