Measurement of carrier lifetime and interface recombination velocity in Si–Ge waveguides

2007 ◽  
Vol 91 (4) ◽  
pp. 041112 ◽  
Author(s):  
A. Trita ◽  
I. Cristiani ◽  
V. Degiorgio ◽  
D. Chrastina ◽  
H. von Känel
Keyword(s):  
Carrier Lifetime ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

MEASUREMENT OF THE LIFETIME OF PHOTO-GENERATED FREE CARRIERS IN SiGe WAVEGUIDES

2007 ◽  
Vol 16 (02) ◽  
pp. 207-216
Author(s):  
A. TRITA ◽  
I. CRISTIANI ◽  
V. DEGIORGIO ◽  
M. DÖBELI ◽  
D. CHRASTINA ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Layer Thickness ◽  
Carrier Lifetime ◽  
Planar Waveguides ◽  
Probe Technique ◽  
Free Carriers ◽  
Interface Recombination ◽  
Pump And Probe ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe technique, using an ultrashort 810 nm laser pulse and a CW 1.55 μm probe, as a function of layer thickness d and Ge concentration x. The measured lifetimes are in the range of 20-90 ns. The obtained interface recombination velocity S is a growing function of both d and x, taking values in the range from 300 to 4000 cm/s.

The influence of sodium on the molybdenum/Cu(In,Ga)Se2 interface recombination velocity, determined by time resolved photoluminescence

2015 ◽  
Vol 107 (5) ◽  
pp. 051601 ◽  
Author(s):  
Enrico Jarzembowski ◽  
Frank Syrowatka ◽  
Kai Kaufmann ◽  
Wolfgang Fränzel ◽  
Torsten Hölscher ◽  
...  
Keyword(s):  
Time Resolved ◽  
Interface Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity ◽  
Time Resolved Photoluminescence
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