A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors

Daniel Lizzit; David Esseni; Pierpaolo Palestri; Luca Selmi

doi:10.1063/1.4903768

A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.4903768 ◽

2014 ◽

Vol 116 (22) ◽

pp. 223702 ◽

Cited By ~ 19

Author(s):

Daniel Lizzit ◽

David Esseni ◽

Pierpaolo Palestri ◽

Luca Selmi

Keyword(s):

Surface Roughness ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body ◽

Limited Mobility ◽

New Formulation

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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Effect of metal–oxide–semiconductor processing on the surface roughness of strained Si/SiGe material

Journal of Applied Physics ◽

10.1063/1.1489712 ◽

2002 ◽

Vol 92 (3) ◽

pp. 1298-1306 ◽

Cited By ~ 18

Author(s):

S. H. Olsen ◽

A. G. O’Neill ◽

S. J. Bull ◽

N. J. Woods ◽

J. Zhang

Keyword(s):

Surface Roughness ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Processing ◽

Strained Si

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors

Applied Physics Letters ◽

10.1063/1.1572967 ◽

2003 ◽

Vol 82 (19) ◽

pp. 3251-3253 ◽

Cited By ~ 32

Author(s):

F. Gámiz ◽

J. B. Roldán ◽

J. E. Carceller ◽

P. Cartujo

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Limited Mobility

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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Cited By ~ 4

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

P Type

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Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

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Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors

Applied Physics Letters ◽

10.1063/1.1510178 ◽

2002 ◽

Vol 81 (13) ◽

pp. 2391-2393 ◽

Cited By ~ 35

Author(s):

Shin-ichi Saito ◽

Kazuyoshi Torii ◽

Masahiko Hiratani ◽

Takahiro Onai

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility

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Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104203 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104203 ◽

Cited By ~ 1

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

Kosuke Nagashio ◽

Koji Kita ◽

...

Keyword(s):

Surface Roughness ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Deionized Water ◽

Oxide Semiconductor

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Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.5086890 ◽

2019 ◽

Vol 114 (13) ◽

pp. 132101 ◽

Cited By ~ 2

Author(s):

Yukun Li ◽

Rui Zhang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Body

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Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Journal of Applied Physics ◽

10.1063/1.3592252 ◽

2011 ◽

Vol 109 (11) ◽

pp. 113712 ◽

Cited By ~ 7

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Limited Mobility ◽

Spatially Resolved ◽

Corner Effects

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