Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis
2014 ◽
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pp. 8219-8224
2010 ◽
Vol 49
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pp. 084203
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2010 ◽
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pp. 04DN03
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2019 ◽
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pp. 1900462
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Keyword(s):
2015 ◽
Vol 87
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pp. 9982-9990
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