Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

2007 ◽  
Vol 91 (20) ◽  
pp. 203506 ◽  
Author(s):  
Shigeki Kobayashi ◽  
Masumi Saitoh ◽  
Yukio Nakabayashi ◽  
Ken Uchida
Keyword(s):  
Experimental Study ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Uniaxial Stress ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Limited Mobility ◽  
Stress Effects ◽  
P Type

Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

2004 ◽  
Vol 85 (25) ◽  
pp. 6188-6190 ◽  
Author(s):  
L. Shifren ◽  
X. Wang ◽  
P. Matagne ◽  
B. Obradovic ◽  
C. Auth ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Uniaxial Stress ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Drive Current ◽  
P Type

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2009 ◽  
Vol 48 (4) ◽  
pp. 04C036 ◽  
Author(s):  
San-Lein Wu ◽  
Chung Yi Wu ◽  
Hau-Yu Lin ◽  
Cheng-Wen Kuo ◽  
Shin-Hsin Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Flicker Noise ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type ◽  
Strained Sige

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

2014 ◽  
Vol 104 (26) ◽  
pp. 263507 ◽  
Author(s):  
SangHyeon Kim ◽  
Masafumi Yokoyama ◽  
Ryosho Nakane ◽  
Osamu Ichikawa ◽  
Takenori Osada ◽  
...  
Keyword(s):  
Experimental Study ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Vertical Scaling
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