Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

A. Aoki; S. Miyoshi; J. Shirafuji

doi:10.1049/el:19870630

Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

Electronics Letters ◽

10.1049/el:19870630 ◽

1987 ◽

Vol 23 (17) ◽

pp. 891 ◽

Cited By ~ 1

Author(s):

A. Aoki ◽

S. Miyoshi ◽

J. Shirafuji

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Photochemical Etching

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Effects of interface state density on the carrier transport and performance of metal-insulator-semiconductor (MIS) type thin film solar cells

Journal of Physics Conference Series ◽

10.1088/1742-6596/1481/1/012005 ◽

2020 ◽

Vol 1481 ◽

pp. 012005

Author(s):

Fandi Oktasendra ◽

Rahmat Hidayat ◽

Rizky Indra Utama

Keyword(s):

Thin Film ◽

Solar Cells ◽

Carrier Transport ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Thin Film Solar Cells ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

And Performance

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InGaAsPn‐channel inversion‐mode metal‐insulator‐semiconductor field‐effect transistor with low interface state density

Journal of Applied Physics ◽

10.1063/1.328582 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6386-6394 ◽

Cited By ~ 28

Author(s):

Yukinobu Shinoda ◽

Takeshi Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

Applied Physics Letters ◽

10.1063/1.117933 ◽

1996 ◽

Vol 69 (2) ◽

pp. 230-232 ◽

Cited By ~ 32

Author(s):

Zhi Chen ◽

Dae‐Gyu Park ◽

Francke Stengal ◽

S. Noor Mohammad ◽

Hadis Morkoç

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

P Type

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Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.104101 ◽

2017 ◽

Vol 56 (10) ◽

pp. 104101

Author(s):

Hirokuni Tokuda ◽

Joel T. Asubar ◽

Masaaki Kuzuhara

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Interface State ◽

State Density ◽

Interface State Density ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors

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Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes

Materials Science and Engineering B ◽

10.1016/j.mseb.2020.114707 ◽

2020 ◽

Vol 262 ◽

pp. 114707

Author(s):

M. Whiteside ◽

S. Arulkumaran ◽

Y. Dikme ◽

A. Sandupatla ◽

G.I. Ng

Keyword(s):

Low Temperature ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Temperature Epitaxy

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Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4901290 ◽

2014 ◽

Vol 116 (18) ◽

pp. 184507 ◽

Cited By ~ 8

Author(s):

Hong-An Shih ◽

Masahiro Kudo ◽

Toshi-kazu Suzuki

Keyword(s):

Semiconductor Devices ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Temperature Mapping ◽

Control Efficiency ◽

Gate Control ◽

Frequency Temperature

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A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - voltage and photocapacitance - light intensity measurements

10.1063/1.4848283 ◽

2013 ◽

Author(s):

Maciej Matys ◽

Boguslawa Adamowicz ◽

Tamotsu Hashizume

Keyword(s):

Light Intensity ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Intensity Measurements ◽

Capacitance Voltage ◽

Novel Method

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Metal/Insulator/Si structures with low interface state density fabricated by combined ion beam sputtering and atomic hydrogen beam treatment

Journal of Applied Physics ◽

10.1063/1.332281 ◽

1983 ◽

Vol 54 (5) ◽

pp. 2863-2865 ◽

Cited By ~ 4

Author(s):

M. Garrigues ◽

R. Blanchet ◽

C. Sibran ◽

P. Viktorovitch

Keyword(s):

Atomic Hydrogen ◽

Ion Beam ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Ion Beam Sputtering ◽

Metal Insulator ◽

Beam Sputtering ◽

Hydrogen Beam

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Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.133.1279 ◽

2013 ◽

Vol 133 (7) ◽

pp. 1279-1284

Author(s):

Takuro Iwasaki ◽

Toshiro Ono ◽

Yohei Otani ◽

Yukio Fukuda ◽

Hiroshi Okamoto

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Conductance Technique ◽

Density Evaluation ◽

P Type

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Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

10.31399/asm.cp.istfa1998p0213 ◽

1998 ◽

Author(s):

Tomasz Brozek ◽

James Heddleson

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Wafer Surface ◽

Oxide Charge ◽

Contact Test ◽

Deposition Power ◽

Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

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