Separation algorithm for bulk lifetime and surface recombination velocity of thick silicon wafers and bricks via time-resolved photoluminescence decay

2014 ◽  
Vol 115 (17) ◽  
pp. 173103 ◽  
Author(s):  
Kai Wang ◽  
Henner Kampwerth
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Separation Algorithm ◽  
Time Resolved ◽  
Photoluminescence Decay ◽  
Recombination Velocity ◽  
Time Resolved Photoluminescence

scholarly journals Carrier Lifetime Enhancement in a Tellurium Nanowire/PEDOT:PSS Nanocomposite by Sulfur Passivation

2015 ◽  
Vol 1742 ◽  
Author(s):  
James N. Heyman ◽  
Ayaskanta Sahu ◽  
Nelson E. Coates ◽  
Brittany Ehmann ◽  
Jeffery J. Urban
Keyword(s):  
Carrier Lifetime ◽  
Surface Recombination ◽  
Structural Defects ◽  
Surface Recombination Velocity ◽  
Matrix Composites ◽  
Time Resolved ◽  
Dc Conductivities ◽  
Sulfur Passivation ◽  
Recombination Velocity ◽  
Tellurium Nanowires

ABSTRACTWe report static and time-resolved terahertz (THz) conductivity measurements of a highperformance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of the nanowires surfaces. The material with sulfur linkers (TeNW/PD-S) is less conductive but has a longer carrier lifetime than the formulation without (TeNW/PD). We find real conductivities at f = 1THz of σTeNW/PD = 160 S/cm and σTeNW/PD-S = 5.1 S/cm. These values are much larger than the corresponding DC conductivities, suggesting DC conductivity is limited by structural defects. The free-carrier lifetime in the nanowires is controlled by recombination and trapping at the nanowire surfaces. We find surface recombination velocities in bare tellurium nanowires (22m/s) and TeNW/PD-S (40m/s) that are comparable to evaporated tellurium thin films. The surface recombination velocity in TeNW/PD (509m/s) is much larger, indicating a higher interface trap density.

Surface recombination velocity of silicon wafers by photoluminescence

2005 ◽  
Vol 86 (11) ◽  
pp. 112110 ◽  
Author(s):  
D. Baek ◽  
S. Rouvimov ◽  
B. Kim ◽  
T.-C. Jo ◽  
D. K. Schroder
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

2006 ◽  
Vol 527-529 ◽  
pp. 493-496 ◽  
Author(s):  
Sung Wook Huh ◽  
Joseph J. Sumakeris ◽  
A.Y. Polyakov ◽  
Marek Skowronski ◽  
Paul B. Klein ◽  
...  
Keyword(s):  
Deep Level ◽  
Surface Recombination ◽  
Deep Trap ◽  
Analytical Form ◽  
Optical Injection ◽  
Surface Recombination Velocity ◽  
Time Resolved ◽  
Electron Traps ◽  
Carrier Lifetimes ◽  
Recombination Velocity

Carrier lifetimes and the dominant electron and hole traps were investigated in a set of thick (9-104mm) undoped 4H-SiC epitaxial layers grown by CVD homoepitaxy. Deep trap spectra were measured by deep level transient spectroscopy (DLTS) with electrical or optical injection, while lifetimes were measured by room temperature time-resolved photoluminescence (PL). The main electron traps detected in all samples were due to Ti, Z1/Z2 centers, and EH6/EH7 centers. Two boron-related hole traps were observed with activation energies of 0.3 eV (boron acceptors) and 0.6 eV (boron-related D centers). The concentration of electron traps decreased with increasing layer thickness and increased toward the edge of the wafers. PL lifetimes were in the 400 ns-1800 ns range with varying injection and generally correlated with changes in the density of Z1/Z2 and to a lesser extent the EH6/EH7 electron traps. However, the results of DLTS measurements on p-i-n diode structures suggest that the capture of injected holes is much more efficient for the Z1/Z2 traps compared to the EH6/EH7 centers making the Z1/Z2 more probable candidates for the role of lifetime killers. A good fit of the thickness dependence of the measured lifetimes to the usual analytical form was obtained assuming that Z1/Z2 is the dominant hole recombination center and that the surface recombination velocity was 2500 cm/sec.

scholarly journals Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

2016 ◽  
Vol 130 (1) ◽  
pp. 188-190 ◽  
Author(s):  
N. Khelifati ◽  
D. Bouhafs ◽  
A. Mebarek-Azzem ◽  
S. El-Hak Abaidia ◽  
B. Palahouane ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Adequate Method
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