Surface recombination velocity of silicon wafers by photoluminescence

2005 ◽  
Vol 86 (11) ◽  
pp. 112110 ◽  
Author(s):  
D. Baek ◽  
S. Rouvimov ◽  
B. Kim ◽  
T.-C. Jo ◽  
D. K. Schroder
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

scholarly journals Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

2016 ◽  
Vol 130 (1) ◽  
pp. 188-190 ◽  
Author(s):  
N. Khelifati ◽  
D. Bouhafs ◽  
A. Mebarek-Azzem ◽  
S. El-Hak Abaidia ◽  
B. Palahouane ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Adequate Method
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