scholarly journals Carrier Lifetime Enhancement in a Tellurium Nanowire/PEDOT:PSS Nanocomposite by Sulfur Passivation

2015 ◽  
Vol 1742 ◽  
Author(s):  
James N. Heyman ◽  
Ayaskanta Sahu ◽  
Nelson E. Coates ◽  
Brittany Ehmann ◽  
Jeffery J. Urban

ABSTRACTWe report static and time-resolved terahertz (THz) conductivity measurements of a highperformance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of the nanowires surfaces. The material with sulfur linkers (TeNW/PD-S) is less conductive but has a longer carrier lifetime than the formulation without (TeNW/PD). We find real conductivities at f = 1THz of σTeNW/PD = 160 S/cm and σTeNW/PD-S = 5.1 S/cm. These values are much larger than the corresponding DC conductivities, suggesting DC conductivity is limited by structural defects. The free-carrier lifetime in the nanowires is controlled by recombination and trapping at the nanowire surfaces. We find surface recombination velocities in bare tellurium nanowires (22m/s) and TeNW/PD-S (40m/s) that are comparable to evaporated tellurium thin films. The surface recombination velocity in TeNW/PD (509m/s) is much larger, indicating a higher interface trap density.

2014 ◽  
Vol 778-780 ◽  
pp. 432-435 ◽  
Author(s):  
Yuto Mori ◽  
Masashi Kato ◽  
Masaya Ichimura

We evaluated the carrier lifetime to estimate surface recombination velocities for 4H-SiC whose surfaces were treated by various processes. We found that the reactive ion etching (RIE) increased the surface recombination velocity, and we considered that point defects introduced by RIE influence the surface recombination velocity.


2015 ◽  
Vol 5 (1) ◽  
pp. 366-371 ◽  
Author(s):  
Darius Kuciauskas ◽  
Ana Kanevce ◽  
Pat Dippo ◽  
Shahram Seyedmohammadi ◽  
Roger Malik

2018 ◽  
Vol 29 (50) ◽  
pp. 504003 ◽  
Author(s):  
Dingkun Ren ◽  
Zixuan Rong ◽  
Siddharth Somasundaram ◽  
Khalifa M Azizur-Rahman ◽  
Baolai Liang ◽  
...  

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