Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers

2003 ◽  
Vol 93 (8) ◽  
pp. 4686-4690 ◽  
Author(s):  
O. Palais ◽  
A. Arcari
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Contactless Measurement ◽  
Recombination Velocity

Surface recombination velocity of silicon wafers by photoluminescence

2005 ◽  
Vol 86 (11) ◽  
pp. 112110 ◽  
Author(s):  
D. Baek ◽  
S. Rouvimov ◽  
B. Kim ◽  
T.-C. Jo ◽  
D. K. Schroder
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

Contactless Measurement of Carrier Lifetime on Silicon Ingots and Bricks

2009 ◽  
Vol 1210 ◽  
Author(s):  
James S Swirhun ◽  
M Keith Forsyth ◽  
Tanaya Mankad ◽  
Ronald Alan Sinton
Keyword(s):  
High Efficiency ◽  
High Surface ◽  
Surface Recombination ◽  
Poor Quality ◽  
Surface Recombination Velocity ◽  
Contactless Measurement ◽  
Photogenerated Carrier ◽  
Silicon Sample ◽  
Recombination Velocity ◽  
Quality Material

AbstractHigh efficiency silicon solar cells demand the use of high lifetime silicon wafers. Characterization of boules and bricks before wafering allows poor quality material to be rejected before expensive processing steps. This paper extends simulation techniques previously used in quasi-steady-state-photoconductance to transient photoconductance decay measurements of high lifetime bulk samples. Simulated photogenerated carrier density profiles allow estimation of the bulk lifetime of a thick silicon sample with high surface recombination velocity.

scholarly journals Adequate Method for Decoupling Bulk Lifetime and Surface Recombination Velocity in Silicon Wafers

2016 ◽  
Vol 130 (1) ◽  
pp. 188-190 ◽  
Author(s):  
N. Khelifati ◽  
D. Bouhafs ◽  
A. Mebarek-Azzem ◽  
S. El-Hak Abaidia ◽  
B. Palahouane ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Adequate Method
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