Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects

2014 ◽  
Vol 115 (14) ◽  
pp. 144107 ◽  
Author(s):  
E. Todd Ryan ◽  
Stephen M. Gates ◽  
Stephan A. Cohen ◽  
Yuri Ostrovski ◽  
Ed Adams ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Large Scale ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Chemical Vapor Deposited

scholarly journals Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
R. Lukose ◽  
M. Lisker ◽  
F. Akhtar ◽  
M. Fraschke ◽  
T. Grabolla ◽  
...  
Keyword(s):  
Large Scale ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Limiting Factors ◽  
Adhesion Properties ◽  
Si Substrates ◽  
Wetting Contact Angle ◽  
Angle Measurements ◽  
Chemical Vapor Deposited ◽  
Contact Angle Measurements

AbstractOne of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

2004 ◽  
Vol 95 (3) ◽  
pp. 967-976 ◽  
Author(s):  
Jeremy Thurn ◽  
Robert F. Cook ◽  
Mallika Kamarajugadda ◽  
Steven P. Bozeman ◽  
Laura C. Stearns
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Chemical Vapor Deposited ◽  
Stress Hysteresis

Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films

2019 ◽  
Vol 7 (34) ◽  
pp. 10598-10604 ◽  
Author(s):  
Xukun Zhu ◽  
Aolin Li ◽  
Di Wu ◽  
Peng Zhu ◽  
Haiyan Xiang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Heat Treatment ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Area ◽  
Reversible Phase Transition ◽  
Chemical Vapor Deposited ◽  
Reversible Phase

A local large-scale reversible phase transition of MoTe2 film was accomplished through the heat treatment.

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