Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors

1997 ◽  
Vol 70 (7) ◽  
pp. 880-882 ◽  
Author(s):  
C. A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

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