Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

2004 ◽  
Vol 95 (3) ◽  
pp. 967-976 ◽  
Author(s):  
Jeremy Thurn ◽  
Robert F. Cook ◽  
Mallika Kamarajugadda ◽  
Steven P. Bozeman ◽  
Laura C. Stearns
2004 ◽  
Vol 854 ◽  
Author(s):  
Zhiqiang Cao ◽  
Xin Zhang

ABSTRACTThis paper presents a microstructure-based mechanism which elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then applied to explain a series of experimental results that are related to thermal cycling of amorphous dielectric films, such as plasma-enhanced physical vapor deposited (PECVD) silicon oxide (SiOx) films, including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD SiOx films with a thickness varying from 1 to 40 m were studied, as certain demanding applications in Microelectromechanical Systems (MEMS) require such thick films serving as heat/electrical insulation layers.


2014 ◽  
Vol 115 (14) ◽  
pp. 144107 ◽  
Author(s):  
E. Todd Ryan ◽  
Stephen M. Gates ◽  
Stephan A. Cohen ◽  
Yuri Ostrovski ◽  
Ed Adams ◽  
...  

2020 ◽  
Vol 193 ◽  
pp. 108856 ◽  
Author(s):  
Jessica M. Maita ◽  
Gyuho Song ◽  
Mariel Colby ◽  
Seok-Woo Lee

2008 ◽  
Vol 45 (9) ◽  
pp. 518-523 ◽  
Author(s):  
Jong-Ho Kim ◽  
Hyeon-Keun Lee ◽  
Ji-Yeon Park ◽  
Weon-Ju Kim ◽  
Do-Kyung Kim

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