Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

2014 ◽  
Vol 104 (13) ◽  
pp. 132103 ◽  
Author(s):  
Makoto Arita ◽  
Kazuhisa Torigoe ◽  
Takashi Yamauchi ◽  
Takashi Nagaoka ◽  
Toru Aiso ◽  
...  
Keyword(s):  
Fermi Level ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Fermi Level Pinning

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

scholarly journals Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy

SHG(Second Harmonic Generation) in Reflection from GaAs Surfaces during Sulfur Passivation and Photochemical Washing Processes

1992 ◽  
Vol 259 ◽  
Author(s):  
Chikashi Yamada ◽  
Takahiro Kimura ◽  
Peter Fuqua
Keyword(s):  
Second Harmonic Generation ◽  
Fermi Level ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Band Bending ◽  
Remarkable Similarity ◽  
Fermi Level Pinning ◽  
Sulfur Passivation ◽  
Intensity Changes ◽  
Pl Intensity

ABSTRACTA passivation processes using Na2S and photochemical washing of GaAs (100) surfaces was studied in real time by a second-harmonic generation (SHG) technique. The intensities of surface-specific SHG signals were compared with those of photoluminescence (PL) signals. We found a remarkable similarity between the SHG and PL intensity changes during these processes. A band-bending model due to Fermi-level pinning at the surface has been applied in order to account for both the SHG and the PL intensity changes.

Controlled Surface Fermi-level on the SeS2-passivated n-GaAs (100)

1998 ◽  
Vol 510 ◽  
Author(s):  
Jing xi Sun ◽  
F. J. Himpsel ◽  
T. F. Kuech
Keyword(s):  
Fermi Level ◽  
Photoemission Spectroscopy ◽  
Ambient Conditions ◽  
Surface Band ◽  
Band Bending ◽  
Term Stability ◽  
Long Term Stability ◽  
Synchrotron Radiation Photoemission ◽  
Surface Fermi Level

AbstractSelenium disulfide surface treatment can unpin the surface Fermi-level on n-GaAs (100) surfaces, resulting in a reduction in the surface band bending. The long-term stability of the surface Fermi-level unpinning has been studied using photoreflectance spectroscopy under room ambient conditions. Our results show that the SeS2-treated n-GaAs (100) surface is stable up to four months with negligible shift in the surface Fermi-level being noted. The mechanism of the long-term stability is attributed to the layered surface structure formed on the SeS2-treated n- GaAs (100) surface. The chemical structure of the passivated surface was determined by synchrotron radiation photoemission spectroscopy. The outermost layer of sulfur and arsenicbased sulfides and selenides may protect the electronic passivating layer, which consists of gallium-based selenides, from interaction with the atmosphere.

scholarly journals Инфракрасное фотоотражение полупроводниковых материалов A-=SUP=-3-=/SUP=-B-=SUP=-5-=/SUP=- ( О б з о р )

2021 ◽  
Vol 63 (8) ◽  
pp. 991
Author(s):  
О.С. Комков
Keyword(s):  
Fermi Level ◽  
Decisive Role ◽  
Infrared Range ◽  
Orbit Splitting ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
Surface And Interface ◽  
Spin Orbit Splitting ◽  
Wide Wavelength Range ◽  
Excitonic Effects

Photoreflectance is a contactless type of modulation optical spectroscopy. It is used to study the band structure features of monocrystalline semiconductors, their doping level, the composition of alloys, as well as surface and interface band bending. Using high-quality GaAs as an example, the possibilities of describing the photoreflectance lineshape by one-electron and exciton models are demonstrated. The spectra of ultrapure samples of this material exhibit an oscillating structure well described by excitonic effects. For III-V alloys, a review of photoreflectance results concerning the effect of composition and temperature on the band gap and spin-orbit splitting is carried out. Determination of the position of the Fermi level on the surface (Fermi level pinning) for III-V crystals is considered. The currently developing technique for measuring photoreflectance in the mid-infrared range (photomodulation Fourier transform infrared spectroscopy) is described in detail. It is shown that phase correction plays a decisive role in such measurements. Original results demonstrate the capabilities of this method in a wide wavelength range.

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

1989 ◽  
Vol 54 (6) ◽  
pp. 555-557 ◽  
Author(s):  
E. Yablonovitch ◽  
B. J. Skromme ◽  
R. Bhat ◽  
J. P. Harbison ◽  
T. J. Gmitter
Keyword(s):  
Fermi Level ◽  
Fixed Charge ◽  
Band Bending ◽  
Fermi Level Pinning

Evidence of band bending and surface Fermi level pinning in graphite oxide

Carbon ◽  
2013 ◽  
Vol 57 ◽  
pp. 227-231 ◽  
Author(s):  
Hae Kyung Jeong ◽  
Lingmei Hong ◽  
Xin Zhang ◽  
Eduardo Vega ◽  
P.A. Dowben
Keyword(s):  
Fermi Level ◽  
Graphite Oxide ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
Surface Fermi Level

scholarly journals Correlative analysis of embedded silicon interfaces passivation by “Kelvin probe force microscopy” and “corona oxide characterization of semiconductor”

2021 ◽  
Author(s):  
Valentin Aubriet ◽  
Kristell Courouble ◽  
Mickael Gros-Jean ◽  
Lukasz Borowik
Keyword(s):  
Field Effect ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Surface Band ◽  
Worst Case ◽  
Band Bending ◽  
Force Microscopy ◽  
Correlative Analysis ◽  
Chemical Passivation

    We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) for the study of embedded silicon-oxide interfaces in the field of chemical and field-effect passivation. Analyzed parameters by these measurements are linked to different factors and specifically to defects density of embedded silicon-dielectric interfaces, surface band bending or the distribution of charges in the nearest surface volume. Furthermore, this COCOS-KPFM correlative analysis turns out to be a useful method to access to chemical and field-effect passivation. We confirm that it is possible to differentiate the influence of local band bending on sample passivation (i.e. field effect passivation) from the effects due to the local recombination rates (i.e. chemical passivation). The measurements were carried on five different passivation layers, precisely, 10.5 nm-thick SiO2, 50 nm-thick SiN, 7nm-thick Al2O3, 7 nm-thick HfO2 and double layer of 7 nm-thick Al2O3 below 53 nm-thick Ta2O5. This correlative analysis indicates that HfO2 present to be the best chemical passivation and SiN is the worst case in term of field effect passivation for p-type silicon. Additionally, we confirm that Ta2O5 layer on top of Al2O3 increase the defects density.

Sign in / Sign up

Export Citation Format

Share Document