scholarly journals Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy

Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy

2005 ◽  
Vol 892 ◽  
Author(s):  
Serguei Chevtchenko ◽  
M A Reshchikov ◽  
K Zhu ◽  
Y-T Moon ◽  
A A Baski ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Potential ◽  
Experimental Error ◽  
Room Temperature ◽  
Surface States ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy

AbstractThe influence of passivation with SiO2 and SiNx on optical properties and surface band bending in unintentionally doped GaN has been studied by steady-state photoluminescence (PL) and surface potential electric force microscopy (SP-EFM). For both types of passivation we observed a significant increase of PL intensity in air ambient at room temperature. The measured surface potential was the same for control and passivated samples within the experimental error. The value of the surface band-bending was determined as 1.0±0.2 eV in all cases. We suggest that the strong enhancement of PL is caused by reduction of contribution of the surface states to recombination of photogenerated carriers after passivation.

Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy

2006 ◽  
Vol 527-529 ◽  
pp. 1529-1532 ◽  
Author(s):  
S. Chevtchenko ◽  
Q. Fan ◽  
Cole W. Litton ◽  
A.A. Baski ◽  
Hadis Morkoç
Keyword(s):  
Surface Potential ◽  
Device Fabrication ◽  
Additional Contribution ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
High Temperature Reaction ◽  
Electric Force Microscopy ◽  
Ambient Gas

It is generally accepted that the Schottky barrier height (SBH) is affected by the initial band bending at the bare nGaN surface as well as by an additional contribution following metal deposition. In this work the effect of processing used for device fabrication on the surface band bending of bare c-plane nGaN was studied by surface potential electric force microscopy (SP-EFM). An increase of the initial upward band bending from 1.0 ± 0.1eV for the as-grown GaN to 1.9 ± 0.1eV after RTA treatment in N2 ambient was observed. No significant dependence of band bending on N2 or Ar as ambient gas during the RTA treatment was observed. The increase of the initial upward band bending was also confirmed by photoluminescence (PL) measurements. We suggest that the RTA treatment causes a high density of surface states, possibly as a result of high temperature reaction of ambient gas and remnant contamination.

Study of the surface potential and photovoltage of conducting polymers using electric force microscopy

2001 ◽  
Vol 124 (2-3) ◽  
pp. 407-414 ◽  
Author(s):  
Joseph N. Barisci ◽  
Rita Stella ◽  
Geoffrey M. Spinks ◽  
Gordon G. Wallace
Keyword(s):  
Conducting Polymers ◽  
Surface Potential ◽  
Electric Force ◽  
Force Microscopy ◽  
Electric Force Microscopy

scholarly journals Controlling Surface Potential of Graphene Using dc Electric Field

2016 ◽  
Vol 1 (1) ◽  
pp. 183 ◽  
Author(s):  
R. Vidyasagar ◽  
B. Camargo ◽  
E. Pelegova ◽  
K. Romanyuk ◽  
A.L. Kholkin
Keyword(s):  
Work Function ◽  
Surface Potential ◽  
Graphene Layer ◽  
Detection Sensitivity ◽  
Electric Force ◽  
Si Substrate ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Electric Force Microscopy ◽  
Dc Electric Field

<p>In this work, we study surface potential of graphite deposited on SiO<sub>2</sub>/Si substrate using Kelvin Probe Force Microscopy (KPFM) and Electric Force Microscopy (EFM). The amplitude modulated KPFM (AM-KPFM) shows that the graphene layer work function is 4.69±0.02 eV, whereas frequency modulated KPFM (FM-KPFM) revealed 4.50±0.02 eV. The work function indifference of 0.19±0.02 eV was attributed to the superior resolution of FM-KPFM and higher detection sensitivity of AM-KPFM. Subsequent EFM mapping suggests that the phase monotonically increases with increasing applied <em>dc</em> bias voltage in the range from -5 V to 5 V. This phase shift is ascribed to the induced charge polarization at tip-graphene surface due to interatomic interactions induced by <em>dc</em> field effects.</p>

Sub-10 nm spatial resolution for electrical properties measurements using bimodal excitation in electric force microscopy

2021 ◽  
Vol 92 (2) ◽  
pp. 023703
Author(s):  
Khaled Kaja ◽  
Denis Mariolle ◽  
Nicolas Chevalier ◽  
Adnan Naja ◽  
Mustapha Jouiad
Keyword(s):  
Electrical Properties ◽  
Spatial Resolution ◽  
Electric Force ◽  
Force Microscopy ◽  
Electric Force Microscopy

Subsurface characterization of carbon nanotubes in polymer composites via quantitative electric force microscopy

2010 ◽  
Vol 21 (22) ◽  
pp. 225702 ◽  
Author(s):  
Minhua Zhao ◽  
Xiaohong Gu ◽  
Sharon E Lowther ◽  
Cheol Park ◽  
Y C Jean ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Polymer Composites ◽  
Electric Force ◽  
Force Microscopy ◽  
Subsurface Characterization ◽  
Electric Force Microscopy
Sign in / Sign up

Export Citation Format

Share Document