scholarly journals Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

2014 ◽  
Vol 115 (12) ◽  
pp. 123505 ◽  
Author(s):  
J. Will ◽  
A. Gröschel ◽  
C. Bergmann ◽  
E. Spiecker ◽  
A. Magerl
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Precipitate Growth ◽  
Doped Silicon ◽  
Oxygen Precipitates

Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

2014 ◽  
Vol 105 (11) ◽  
pp. 111902 ◽  
Author(s):  
J. Will ◽  
A. Gröschel ◽  
C. Bergmann ◽  
M. Weißer ◽  
A. Magerl
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Silicon wafer strain under local photonic annealing

2019 ◽  
Vol 20 (2) ◽  
pp. 142-147
Author(s):  
V. V. Starkov ◽  
E. A. Gosteva ◽  
D. V. Irzhak ◽  
D. V. Roshchupkin
Keyword(s):  
Crystal Structure ◽  
Low Temperatures ◽  
Tensile Strain ◽  
Silicon Wafers ◽  
Local Processing ◽  
Back Side ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction. It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation. The same process with the use of original photo− mask, which allows local processing produces multiple, spatially separated regions of the plate produced by Lосаl Photonic Annealing (LPA) at relatively low temperatures (less than 55 °C), gives rise to a tensile strain. This established effect is not observed if on the back side of the plates there is mechanical gettering layer. The mechanism explaining the experimental results can be used in the formation of the charge pump in the structure of the photo electric converters (PEC).

Characterization of boron‐doped silicon epitaxial layers by x‐ray diffraction

1991 ◽  
Vol 58 (19) ◽  
pp. 2129-2131 ◽  
Author(s):  
J.‐M. Baribeau ◽  
S. J. Rolfe
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

Stress study of HFCVD boron-doped diamond films by X-ray diffraction measurements

2001 ◽  
Vol 10 (3-7) ◽  
pp. 750-754 ◽  
Author(s):  
N.G. Ferreira ◽  
E. Abramof ◽  
E.J. Corat ◽  
N.F. Leite ◽  
V.J. Trava-Airoldi
Keyword(s):  
Diamond Films ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Stress Study

Visible-Light-Induced Photocatalytic Activity of Boron-Doped BiVO4

2014 ◽  
Vol 809-810 ◽  
pp. 890-894
Author(s):  
Dan Li ◽  
Lian Wei Shan ◽  
Gui Lin Wang ◽  
Li Min Dong ◽  
Wei Li ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Sol Gel ◽  
Reflectance Spectroscopy ◽  
Scheelite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped

Boron-BiVO4 samples were synthesized by sol-gel method. They were characterized by UV-vis diffuse reflectance spectroscopy, X-ray diffraction. Photocatalytic activity of the obtained BiVO4 samples was investigated through degrading methylene blue (MB). The results reveal that boron-BiVO4 catalysts have monoclinic scheelite structure. The BiVO4 and Co-BiVO4 photocatalysts were responsive to visible light. Co-BiVO4 photocatalyst showed higher photocatalytic activity than pure BiVO4, resulting in the significantly improved efficiency of degradation of MB.

Heavily boron‐doped silicon membranes with enhanced mechanical properties for x‐ray mask substrate

1994 ◽  
Vol 65 (11) ◽  
pp. 1385-1387 ◽  
Author(s):  
Ho‐Jun Lee ◽  
Chul‐Hi Han ◽  
Choong‐Ki Kim
Keyword(s):  
Mechanical Properties ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Membranes
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