Characterization of thin boron-doped silicon membranes by double-crystal x-ray topography

1989 ◽  
Vol 7 (6) ◽  
pp. 1594 ◽  
Author(s):  
David I. Ma
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Membranes

Heavily boron‐doped silicon membranes with enhanced mechanical properties for x‐ray mask substrate

1994 ◽  
Vol 65 (11) ◽  
pp. 1385-1387 ◽  
Author(s):  
Ho‐Jun Lee ◽  
Chul‐Hi Han ◽  
Choong‐Ki Kim
Keyword(s):  
Mechanical Properties ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Membranes

Characterization of boron‐doped silicon epitaxial layers by x‐ray diffraction

1991 ◽  
Vol 58 (19) ◽  
pp. 2129-2131 ◽  
Author(s):  
J.‐M. Baribeau ◽  
S. J. Rolfe
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

Characterization of silicon on insulator substrates using reflection mode double-crystal X-ray topography

1991 ◽  
Vol 206 (1-2) ◽  
pp. 27-33 ◽  
Author(s):  
David I. Ma ◽  
George J. Campisi ◽  
Syed B. Qadri ◽  
Martin C. Peckerar
Keyword(s):  
Silicon On Insulator ◽  
Reflection Mode ◽  
Double Crystal ◽  
X Ray

Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.

1986 ◽  
Vol 77 ◽  
Author(s):  
M. G. Burke ◽  
W. J. Choyke ◽  
N. J. Doyle ◽  
Z. C. Feng ◽  
M. H. Hanes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Milling ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Line Defects ◽  
Cdte Films ◽  
Means Of Transmission ◽  
Low Temperature Photoluminescence

ABSTRACTThe effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

1986 ◽  
Vol 69 ◽  
Author(s):  
F. Cembali ◽  
A. M. Mazzone ◽  
M. Servidori
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Double Crystal ◽  
X Ray ◽  
Free Carriers ◽  
Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

Microstructural Characterization of GaAs Substrates

1986 ◽  
Vol 69 ◽  
Author(s):  
T. M. Moore ◽  
S. Matteso ◽  
W. M. Duncan ◽  
R. J. Matyi
Keyword(s):  
Defect Structure ◽  
Microstructural Characterization ◽  
Acoustic Microscopy ◽  
Double Crystal ◽  
X Ray ◽  
Major Transitions ◽  
Gaas Substrates ◽  
Defect Microstructures ◽  
Electron Acoustic

AbstractThe defect microstructures of GaAs substrates have been investigated in a multi-technique approach including integral cathodoluminescence (CL), scanning electron acoustic microscopy (SEAM), double crystal x-ray topography (XRT), and defect delineation etch. The XRT, CL, and SEAM studies are of identical areas on <100> SI GaAs(Cr) grown by the liquid encapsulated Czochralski (LEC) method and by the horizontal Bridgman (HB) method. Correlation was made to the defect structure revealed by defect delineation etching. The samples were also characterized by Fourier transform photoluminescence (FTPL) to qualitatively identify the major transitions contributing to the CL images. The CL, SEAM, XRT, and defect delineation etch images of each material are compared and their different perspectives are discussed.

Characterization of epilayers by X-ray double crystal rocking curve peak profile analysis

1995 ◽  
Vol 148 (1-2) ◽  
pp. 31-34 ◽  
Author(s):  
Haiyan An ◽  
Ming Li ◽  
Shuren Yang ◽  
Zhenhong Mai ◽  
Shiyong Liu
Keyword(s):  
Profile Analysis ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray
Sign in / Sign up

Export Citation Format

Share Document