Characterization of boron‐doped silicon epitaxial layers by x‐ray diffraction

1991 ◽  
Vol 58 (19) ◽  
pp. 2129-2131 ◽  
Author(s):  
J.‐M. Baribeau ◽  
S. J. Rolfe
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

2014 ◽  
Vol 105 (11) ◽  
pp. 111902 ◽  
Author(s):  
J. Will ◽  
A. Gröschel ◽  
C. Bergmann ◽  
M. Weißer ◽  
A. Magerl
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

Characterization of thin, doped silicon single crystals by x‐ray diffraction

1992 ◽  
Vol 72 (1) ◽  
pp. 54-60 ◽  
Author(s):  
Stefan Joksch ◽  
Walter Graeff ◽  
Peter Zaumseil ◽  
Ulrich Winter ◽  
Laszlo Csepregi ◽  
...  
Keyword(s):  
Single Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Silicon

Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

scholarly journals Silicon wafer strain under local photonic annealing

2019 ◽  
Vol 20 (2) ◽  
pp. 142-147
Author(s):  
V. V. Starkov ◽  
E. A. Gosteva ◽  
D. V. Irzhak ◽  
D. V. Roshchupkin
Keyword(s):  
Crystal Structure ◽  
Low Temperatures ◽  
Tensile Strain ◽  
Silicon Wafers ◽  
Local Processing ◽  
Back Side ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction. It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation. The same process with the use of original photo− mask, which allows local processing produces multiple, spatially separated regions of the plate produced by Lосаl Photonic Annealing (LPA) at relatively low temperatures (less than 55 °C), gives rise to a tensile strain. This established effect is not observed if on the back side of the plates there is mechanical gettering layer. The mechanism explaining the experimental results can be used in the formation of the charge pump in the structure of the photo electric converters (PEC).

scholarly journals Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

2014 ◽  
Vol 115 (12) ◽  
pp. 123505 ◽  
Author(s):  
J. Will ◽  
A. Gröschel ◽  
C. Bergmann ◽  
E. Spiecker ◽  
A. Magerl
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Precipitate Growth ◽  
Doped Silicon ◽  
Oxygen Precipitates
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