Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

2014 ◽  
Vol 104 (4) ◽  
pp. 042111 ◽  
Author(s):  
D. C. Walter ◽  
B. Lim ◽  
K. Bothe ◽  
V. V. Voronkov ◽  
R. Falster ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Doped

Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

1995 ◽  
Vol 77 (7) ◽  
pp. 2974-2977 ◽  
Author(s):  
Jiangbao Wang ◽  
Qiang Xu ◽  
Jian Yuan ◽  
Fang Lu ◽  
Henghui Sun ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Strain Relaxation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Epitaxial Layer

Defect States Induced by Rapid Thermal Annealing in Virgin or Implanted Czochralski-Grown Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
M. Remram ◽  
D. Barbier ◽  
J.-F. Joly ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Contacts ◽  
High Dose ◽  
Hole Trap ◽  
Defect States ◽  
Incoherent Light ◽  
Boron Doped ◽  
Doped Silicon ◽  
State Generation

AbstractDefect state generation in either virgin or implanted CZ silicon has been investigated by means of capacitance transient spectroscopy (DLTS) after rapid thermal annealing (RTA), using an incoherent light furnace and variable cycle parameters. No electron traps were dectected with gold Schottky contacts made on virgin phosporous-doped silicon annealed for 5 sec at any temperature. On the otherhand 3 hole trap levels H1(0.45 eV), H2(0.29 eV) and H3(0.31 eV) have been observed in boron-doped silicon (Al Schottky contacts) after a 5 sec temperature plateau between 850 and 1050°C. Peak concentrations ranging from 1013 to 1014 cm−3 were measured after annealing at 1000°C for the three hole traps. By increasing the plateau duration up to 20 sec hole traps were no longer detected in boron-doped silicon. Furthermore in As+ or PF5+-implanted and rapidly annealed N+/P junctions the H3(0.31 eV) level was replaced by another hole trap H4(0.4 eV), which appeared within specific conditions (RTA parameters, implant dose and species). Moreover an electron trap E(0.55 eV) was only detected in the high dose As+-implanted junctions after annealing for 10 sec at 1100°C. The probable metallic origin of the observed defect states and the RTA parameter dependence of the hole trap concentrations suggest gettering and trapping in interstitial sites as possible mechanisms involved in RTA.

scholarly journals STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING

1994 ◽  
Vol 43 (7) ◽  
pp. 1137
Author(s):  
YUAN JIAN ◽  
LU FANG ◽  
SUN HENG-HUI ◽  
WEI XING ◽  
YANG MIN ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Doped

Effects of Rapid Thermal Annealing on Heavily Boron Doped Silicon Epitaxial Layers

1994 ◽  
Vol 355 ◽  
Author(s):  
Jianbao Wang ◽  
Qiang Xu ◽  
Fang Lu ◽  
Henghui Sun ◽  
Xun Wang
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layers ◽  
Boron Doped ◽  
Doped Silicon

The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

1997 ◽  
Vol 469 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
P. A. Stoik ◽  
V. Privitera ◽  
J. G. M. van Berkum ◽  
W. B. de Boer ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Activation ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Effect Of Oxygen ◽  
P Type ◽  
And Diffusion ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion (TED) and electrical activation (EA) of ion-implanted boron during rapid thermal annealing has been investigated using three types of boron doped p-type Si (100) substrates: (a) Cz 20 Ωcm, (b) 3 μm thick 20 Ωcm epitaxial Si layer (epi-layer) grown on a 20 Ωcm Cz substrate, and (c) 3 μm thick 20 Ωcm epi-layer grown on a 5 mΩcin Fz substrate. The level of oxygen is known to decrease from material type (a) to (c). The samples were implanted with 20 keV, 5×1013cm−2boron and subjected to rapid thermal annealing (RTA) at various temperatures and times. The EA and TED were studied using spreading resistance profiling (SRP) and secondary ion mass spectrometry (SIMS), respectively. Although the amount of TED is almost identical for the three substrates, the EA is found to be significantly higher in the epi-layers compared to Cz substrates. It is speculated that the trapping of vacancies by oxygen in the ion-damaged region leads to an increase in the interstitial supersaturation during annealing, which then results in enhanced boron clustering and reduced electrical activation in the peak of the implanted profile.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

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