Electrical And Piezoresistive Characterization Of Boron Doped Lpcvd Polycrystalline Silicon Under Rapid Thermal Annealing

2005 ◽  
Author(s):  
M. Le Berre ◽  
P. Kleimann ◽  
B. Scirmiache ◽  
D. Barbier ◽  
P. Pinard
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Boron Doped

Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal Annealing

1989 ◽  
Vol 136 (1) ◽  
pp. 215-224 ◽  
Author(s):  
M. Delfino ◽  
J. G. de Groot ◽  
K. N. Ritz ◽  
P. Maillot
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon

Characterization of Ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing

1999 ◽  
Vol 144-145 ◽  
pp. 697-701 ◽  
Author(s):  
W.K Choi ◽  
S Kanakaraju ◽  
Z.X Shen ◽  
W.S Li
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ge Nanocrystals

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Characterization of the TiW‐GaAs interface after rapid thermal annealing

1989 ◽  
Vol 66 (10) ◽  
pp. 4775-4779 ◽  
Author(s):  
M. de Potter ◽  
W. De Raedt ◽  
M. Van Hove ◽  
G. Zou ◽  
H. Bender ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

2012 ◽  
Vol 27 (9) ◽  
pp. 1314-1323 ◽  
Author(s):  
Chun-Wei Chang ◽  
Min-Hao Hong ◽  
Wei-Fan Lee ◽  
Kuan-Ching Lee ◽  
Li-De Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Change ◽  
Image Position ◽  
Raman Characterization

Abstract

Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Narayan ◽  
T. A. Stephenson ◽  
T. Brat ◽  
D. Fathy ◽  
S. J. Pennycook
Keyword(s):  
Titanium Oxide ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Annealing Treatment ◽  
External Layer ◽  
Rich Mixture ◽  
Thermal Annealing Treatment ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

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