Effects of Rapid Thermal Annealing on Heavily Boron Doped Silicon Epitaxial Layers

1994 ◽  
Vol 355 ◽  
Author(s):  
Jianbao Wang ◽  
Qiang Xu ◽  
Fang Lu ◽  
Henghui Sun ◽  
Xun Wang
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layers ◽  
Boron Doped ◽  
Doped Silicon

Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

1995 ◽  
Vol 77 (7) ◽  
pp. 2974-2977 ◽  
Author(s):  
Jiangbao Wang ◽  
Qiang Xu ◽  
Jian Yuan ◽  
Fang Lu ◽  
Henghui Sun ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Strain Relaxation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Epitaxial Layer

Defect States Induced by Rapid Thermal Annealing in Virgin or Implanted Czochralski-Grown Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
M. Remram ◽  
D. Barbier ◽  
J.-F. Joly ◽  
A. Laugier
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Contacts ◽  
High Dose ◽  
Hole Trap ◽  
Defect States ◽  
Incoherent Light ◽  
Boron Doped ◽  
Doped Silicon ◽  
State Generation

AbstractDefect state generation in either virgin or implanted CZ silicon has been investigated by means of capacitance transient spectroscopy (DLTS) after rapid thermal annealing (RTA), using an incoherent light furnace and variable cycle parameters. No electron traps were dectected with gold Schottky contacts made on virgin phosporous-doped silicon annealed for 5 sec at any temperature. On the otherhand 3 hole trap levels H1(0.45 eV), H2(0.29 eV) and H3(0.31 eV) have been observed in boron-doped silicon (Al Schottky contacts) after a 5 sec temperature plateau between 850 and 1050°C. Peak concentrations ranging from 1013 to 1014 cm−3 were measured after annealing at 1000°C for the three hole traps. By increasing the plateau duration up to 20 sec hole traps were no longer detected in boron-doped silicon. Furthermore in As+ or PF5+-implanted and rapidly annealed N+/P junctions the H3(0.31 eV) level was replaced by another hole trap H4(0.4 eV), which appeared within specific conditions (RTA parameters, implant dose and species). Moreover an electron trap E(0.55 eV) was only detected in the high dose As+-implanted junctions after annealing for 10 sec at 1100°C. The probable metallic origin of the observed defect states and the RTA parameter dependence of the hole trap concentrations suggest gettering and trapping in interstitial sites as possible mechanisms involved in RTA.

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

2014 ◽  
Vol 104 (4) ◽  
pp. 042111 ◽  
Author(s):  
D. C. Walter ◽  
B. Lim ◽  
K. Bothe ◽  
V. V. Voronkov ◽  
R. Falster ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Doped

scholarly journals STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING

1994 ◽  
Vol 43 (7) ◽  
pp. 1137
Author(s):  
YUAN JIAN ◽  
LU FANG ◽  
SUN HENG-HUI ◽  
WEI XING ◽  
YANG MIN ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Boron Doped
Sign in / Sign up

Export Citation Format

Share Document