High excitation power photoluminescence studies of ultra-low density GaAs quantum dots

2013 ◽  
Author(s):  
D. Sonnenberg ◽  
A. Graf ◽  
V. Paulava ◽  
Ch. Heyn ◽  
W. Hansen
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Low Density ◽  
High Excitation ◽  
Photoluminescence Studies

High-excitation photoluminescence studies of CdS1?x Se x quantum dots

1990 ◽  
Vol 81 (3) ◽  
pp. 385-390 ◽  
Author(s):  
A. Uhrig ◽  
L. Banyai ◽  
Y. Z. Hu ◽  
S. W. Koch ◽  
C. Klingshirn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Excitation ◽  
Photoluminescence Studies

High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Emission Band ◽  
Excitation Power ◽  
High Excitation ◽  
High Pressure Studies ◽  
Band Alignments ◽  
High Pressure Study

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

scholarly journals Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Growth Parameters ◽  
Life Time ◽  
Correlation Factor ◽  
Low Density ◽  
Wafer Scale ◽  
Two Photon ◽  
Gaas Quantum Dot ◽  
Highly Uniform

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

1997 ◽  
Vol 70 (4) ◽  
pp. 414-416 ◽  
Author(s):  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
Z. R. Wasilewski ◽  
V. Ryzhii
Keyword(s):  
Quantum Well ◽  
Excitation Power ◽  
Infrared Photodetectors ◽  
High Excitation ◽  
Quantum Well Infrared Photodetectors

Wetting layer states in low density InAs/InGaAs quantum dots from sub-critical InAs coverages

2013 ◽  
Vol 46 (31) ◽  
pp. 315101 ◽  
Author(s):  
L Seravalli ◽  
G Trevisi ◽  
P Frigeri ◽  
F Rossi ◽  
E Buffagni ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Wetting Layer

Ultra-low density InAs quantum dots

2013 ◽  
Vol 47 (10) ◽  
pp. 1324-1327 ◽  
Author(s):  
V. G. Dubrovskii ◽  
G. E. Cirlin ◽  
P. A. Brunkov ◽  
U. Perimetti ◽  
N. Akopyan
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Inas Quantum Dots

Efficient Single-Photon Sources Based on Low-Density Quantum Dots in Photonic-Crystal Nanocavities

2006 ◽  
Vol 96 (11) ◽  
Author(s):  
Wen-Hao Chang ◽  
Wen-Yen Chen ◽  
Hsiang-Szu Chang ◽  
Tung-Po Hsieh ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Single Photon ◽  
Low Density ◽  
Photon Sources

Low density GaN quantum dots on AlGaN

2006 ◽  
Vol 243 (7) ◽  
pp. 1486-1489 ◽  
Author(s):  
K. Pakuła ◽  
R. Bożek ◽  
K. Surowiecka ◽  
R. Stępniewski ◽  
A. Wysmolek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Density
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