scholarly journals Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Growth Parameters ◽  
Life Time ◽  
Correlation Factor ◽  
Low Density ◽  
Wafer Scale ◽  
Two Photon ◽  
Gaas Quantum Dot ◽  
Highly Uniform

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

scholarly journals Atomic Self-ordering in Heteroepitaxially Grown Semiconductor Quantum Dots due to Relaxation of External Lattice Mismatch Strains

2001 ◽  
Vol 696 ◽  
Author(s):  
Peter Möck ◽  
Teya Topuria ◽  
Nigel D. Browning ◽  
Robin J. Nicholas ◽  
Roger G. Booker
Keyword(s):  
Quantum Dots ◽  
Low Temperatures ◽  
Short Range ◽  
Lattice Mismatch ◽  
Life Time ◽  
Semiconductor Quantum Dots ◽  
Quantum Dot Lasers ◽  
Atomic Order ◽  
Transmission Electron ◽  
Gaas Quantum Dot

AbstractThermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79, 2868 (2001)].

Efficient Single-Photon Sources Based on Low-Density Quantum Dots in Photonic-Crystal Nanocavities

2006 ◽  
Vol 96 (11) ◽  
Author(s):  
Wen-Hao Chang ◽  
Wen-Yen Chen ◽  
Hsiang-Szu Chang ◽  
Tung-Po Hsieh ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Single Photon ◽  
Low Density ◽  
Photon Sources

scholarly journals Resonant excitation of nanowire quantum dots

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Lorenzo Leandro ◽  
Jacob Hastrup ◽  
Rodion Reznik ◽  
George Cirlin ◽  
Nika Akopian
Keyword(s):  
Quantum Dots ◽  
Resonant Excitation ◽  
Resonance Fluorescence ◽  
Excitation Scheme ◽  
Two Photon ◽  
Photon Excitation ◽  
Technological Potential ◽  
Gaas Quantum Dot ◽  
Quantum Photonics ◽  
First Time

AbstractGaAs quantum dots in nanowires are one of the most promising candidates for scalable quantum photonics. They have excellent optical properties, can be frequency-tuned to atomic transitions, and offer a robust platform for fabrication of multi-qubit devices that promise to unlock the full technological potential of quantum dots. Coherent resonant excitation is necessary for virtually any practical application because it allows, for instance, for on-demand generation of single and entangled photons, photonic clusters states, and electron spin manipulation. However, emission from nanowire structures under this excitation scheme has never been demonstrated. Here we show, for the first time, biexciton–exciton cascaded emission via resonant two-photon excitation and resonance fluorescence from an epitaxially grown GaAs quantum dot in an AlGaAs nanowire. We also report that resonant excitation schemes, combined with above-bandgap excitation, can be used to clean and enhance the emission of nanowire quantum dots.

scholarly journals Atomic Self-Ordering in Heteroepitaxially Grown Semiconductor Quantum Dots Due to Relaxation of External Lattice Mismatch Strains

2001 ◽  
Vol 707 ◽  
Author(s):  
Peter Möck ◽  
Teya Topuria ◽  
Nigel D. Browning ◽  
Robin J. Nicholas ◽  
Roger G. Booker
Keyword(s):  
Quantum Dots ◽  
Low Temperatures ◽  
Short Range ◽  
Lattice Mismatch ◽  
Life Time ◽  
Semiconductor Quantum Dots ◽  
Quantum Dot Lasers ◽  
Atomic Order ◽  
Transmission Electron ◽  
Gaas Quantum Dot

ABSTRACTThermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79, 2868 (2001)].

Growth of low density InGaAs quantum dots for single photon sources by metal–organic chemical vapour deposition

2005 ◽  
Vol 17 (2) ◽  
pp. 512-515 ◽  
Author(s):  
Tung-Po Hsieh ◽  
Hsiang-Szu Chang ◽  
Wen-Yen Chen ◽  
Wen-Hao Chang ◽  
Tzu Min Hsu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Single Photon ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Low Density ◽  
Photon Sources ◽  
Metal Organic

Growth and characterization of low density droplet GaAs quantum dots for single photon sources

2011 ◽  
Author(s):  
S.-K. Ha ◽  
J. D. Song ◽  
J. Y. Lim ◽  
S. Bounouar ◽  
F. Donatini ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Low Density ◽  
Photon Sources

scholarly journals Enhanced electric field sensitivity of quantum dot/rod two-photon fluorescence and its relevance for cell transmembrane voltage imaging

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Stijn Jooken ◽  
Yovan de Coene ◽  
Olivier Deschaume ◽  
Dániel Zámbó ◽  
Tangi Aubert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Electric Fields ◽  
Single Photon ◽  
Semiconductor Nanoparticles ◽  
Type I ◽  
Two Photon ◽  
Quantum Rods ◽  
Field Sensitivity ◽  
Photon Excitation

Abstract The optoelectronic properties of semiconductor nanoparticles make them valuable candidates for the long-term monitoring of transmembrane electric fields in excitable cells. In this work, we show that the electric field sensitivity of the fluorescence intensity of type-I and quasi-type-II quantum dots and quantum rods is enhanced under two-photon excitation compared to single-photon excitation. Based on the superior electric field sensitivity of the two-photon excited fluorescence, we demonstrate the ability of quantum dots and rods to track fast switching E-fields. These findings indicate the potential of semiconductor nanoparticles as cellular voltage probes in multiphoton imaging.

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