High-excitation photoluminescence studies of CdS1?x Se x quantum dots

1990 ◽  
Vol 81 (3) ◽  
pp. 385-390 ◽  
Author(s):  
A. Uhrig ◽  
L. Banyai ◽  
Y. Z. Hu ◽  
S. W. Koch ◽  
C. Klingshirn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Excitation ◽  
Photoluminescence Studies

Photoluminescence studies of GaAs quantum dots and quantum rings

2011 ◽  
Vol 8 (9) ◽  
pp. 2826-2829 ◽  
Author(s):  
Ákos Nemcsics ◽  
János Balázs ◽  
Bálint Pődör ◽  
János Makai ◽  
Andrea Stemmann
Keyword(s):  
Quantum Dots ◽  
Quantum Rings ◽  
Photoluminescence Studies

Photoluminescence studies of GaSbBi quantum dots grown on GaAs by liquid phase epitaxy

2016 ◽  
Vol 16 (12) ◽  
pp. 1615-1621 ◽  
Author(s):  
T.D. Das ◽  
D.P. Samajdar ◽  
M.K. Bhowal ◽  
S.C. Das ◽  
S. Dhar
Keyword(s):  
Quantum Dots ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Photoluminescence Studies

Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

2014 ◽  
Vol 116 (2) ◽  
pp. 023510 ◽  
Author(s):  
P. Y. Zhou ◽  
X. M. Dou ◽  
X. F. Wu ◽  
K. Ding ◽  
S. Luo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Self Organized ◽  
Photoluminescence Studies ◽  
Inp Quantum Dots

scholarly journals Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots

1996 ◽  
Vol 74 (S1) ◽  
pp. 216-219 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
State Transition ◽  
Thermionic Emission ◽  
Excitation Density ◽  
High Excitation ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Self Assembled ◽  
Intensity Evolution

Ensembles of~600 AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots (QDs) are investigated using photoluminescence (PL) and time-resolved PL in the visible. At very low excitation intensities, the PL spectrum shows multiple ultranarrow luminescence lines (FWHM ~200 μeV), which are attributed to the ground-state transition of a few dots (4 or less). The temperature and intensity evolution of these sharp lines is then monitored. The temperature-dependent measurements show that the line width and lifetime of the narrow lines remain constant up to the onset of thermionic, emission. Intensity-dependent measurements show that for high excitation density the collective background, emitted by the ensemble of QDs, is enhanced relative to the amplitude of individual ultranarrow lines.

Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE

2006 ◽  
Vol 290 (1) ◽  
pp. 80-86 ◽  
Author(s):  
V. Sallet ◽  
G. Patriarche ◽  
M.N. Merat-Combes ◽  
L. Largeau ◽  
O. Mauguin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Studies
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