Low density GaN quantum dots on AlGaN

2006 ◽  
Vol 243 (7) ◽  
pp. 1486-1489 ◽  
Author(s):  
K. Pakuła ◽  
R. Bożek ◽  
K. Surowiecka ◽  
R. Stępniewski ◽  
A. Wysmolek ◽  
...  
Keyword(s):  
Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.


2013 ◽  
Vol 46 (31) ◽  
pp. 315101 ◽  
Author(s):  
L Seravalli ◽  
G Trevisi ◽  
P Frigeri ◽  
F Rossi ◽  
E Buffagni ◽  
...  

2013 ◽  
Vol 47 (10) ◽  
pp. 1324-1327 ◽  
Author(s):  
V. G. Dubrovskii ◽  
G. E. Cirlin ◽  
P. A. Brunkov ◽  
U. Perimetti ◽  
N. Akopyan

2006 ◽  
Vol 96 (11) ◽  
Author(s):  
Wen-Hao Chang ◽  
Wen-Yen Chen ◽  
Hsiang-Szu Chang ◽  
Tung-Po Hsieh ◽  
Jen-Inn Chyi ◽  
...  

2007 ◽  
Vol 101 (2) ◽  
pp. 024918 ◽  
Author(s):  
B. Alloing ◽  
C. Zinoni ◽  
L. H. Li ◽  
A. Fiore ◽  
G. Patriarche

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