Effective dopant activation via low temperature microwave annealing of ion implanted silicon

2013 ◽  
Vol 103 (19) ◽  
pp. 192103 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Sayantan Das ◽  
Wei Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant ◽  
Ion Implanted

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

2011 ◽  
Vol 32 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Yao-Jen Lee ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Ho-Ming Lin ◽  
Shich-Chuang Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystalline ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Crystalline Germanium

Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

2012 ◽  
Vol 15 (6) ◽  
pp. H185
Author(s):  
Bo-An Tsai ◽  
Chiung-Hui Lai ◽  
Bo-Shiun Lee ◽  
Chih-Wei Luo ◽  
Yao-Jen Lee
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Annealing Process ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Thermal Stability Of

Dopant Activation During Solid Phase Crystallization of Poly-Si and Influence of Fluorine and Hydrogen

1997 ◽  
Vol 467 ◽  
Author(s):  
A. Kaan Kalkan ◽  
Reece M. Kingi ◽  
Stephen J. Fonash
Keyword(s):  
Low Temperature ◽  
Film Thickness ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Dopant Activation ◽  
The Impact ◽  
Ion Implanted

ABSTRACTDopant activation for ion implanted solid phase crystallized (SPC) a-Si:H films, deposited by low temperature PECVD, was investigated. The impact of film thickness, the effect of subsequent hydrogenation, and a possible role for fluorine in this process have been studied.

Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

2013 ◽  
Vol 114 (24) ◽  
pp. 244903 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Wei Lu ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Low Energy ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant

Dopant activation in ion implanted silicon by microwave annealing

2009 ◽  
Vol 106 (11) ◽  
pp. 114902 ◽  
Author(s):  
T. L. Alford ◽  
D. C. Thompson ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Dopant Activation ◽  
Microwave Annealing ◽  
Ion Implanted

Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review

2014 ◽  
Vol 61 (3) ◽  
pp. 651-665 ◽  
Author(s):  
Yao-Jen Lee ◽  
Ta-Chun Cho ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Yu-Lun Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Annealing

Low-temperature annealing of heavily ion-implanted layer

1990 ◽  
Vol 73 (6) ◽  
pp. 86-91
Author(s):  
Tadahiro Ohmi ◽  
Yoshio Ishihara ◽  
Tadashi Shibata ◽  
Akira Okita
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Ion Implanted

Low-temperature soluble InZnO thin film transistors by microwave annealing

2011 ◽  
Vol 326 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Keunkyu Song ◽  
Chang Young Koo ◽  
Taehwan Jun ◽  
Daehee Lee ◽  
Youngmin Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microwave Annealing
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