Variable frequency microwave induced low temperature dopant activation in ion implanted silicon

2009 ◽  
Author(s):  
T.L. Alford ◽  
Iftikhar Ahmad ◽  
Robert Hubbard
Keyword(s):  
Low Temperature ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Implanted

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Dopant Activation During Solid Phase Crystallization of Poly-Si and Influence of Fluorine and Hydrogen

1997 ◽  
Vol 467 ◽  
Author(s):  
A. Kaan Kalkan ◽  
Reece M. Kingi ◽  
Stephen J. Fonash
Keyword(s):  
Low Temperature ◽  
Film Thickness ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Dopant Activation ◽  
The Impact ◽  
Ion Implanted

ABSTRACTDopant activation for ion implanted solid phase crystallized (SPC) a-Si:H films, deposited by low temperature PECVD, was investigated. The impact of film thickness, the effect of subsequent hydrogenation, and a possible role for fluorine in this process have been studied.

Effective dopant activation via low temperature microwave annealing of ion implanted silicon

2013 ◽  
Vol 103 (19) ◽  
pp. 192103 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Sayantan Das ◽  
Wei Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant ◽  
Ion Implanted

Low-temperature annealing of heavily ion-implanted layer

1990 ◽  
Vol 73 (6) ◽  
pp. 86-91
Author(s):  
Tadahiro Ohmi ◽  
Yoshio Ishihara ◽  
Tadashi Shibata ◽  
Akira Okita
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Ion Implanted

Structure and low-temperature thermal relaxation of ion-implanted germanium

2001 ◽  
Vol 8 (2) ◽  
pp. 773-775 ◽  
Author(s):  
C. J. Glover ◽  
M. C. Ridgway ◽  
K. M. Yu ◽  
G. J. Foran ◽  
C. Clerc ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Relaxation ◽  
Ion Implanted

Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs

1980 ◽  
Vol 36 (12) ◽  
pp. 994-996 ◽  
Author(s):  
J. S. Williams ◽  
M. W. Austin
Keyword(s):  
Low Temperature ◽  
Epitaxial Regrowth ◽  
Ion Implanted

Low Temperature (<150°C) Doping Techniques for Polysilicon TFT's

2004 ◽  
Vol 808 ◽  
Author(s):  
W.S. Hong ◽  
J.M. Kim ◽  
S.H. Han ◽  
Y.H. Lee ◽  
Y.W. Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Structural Damage ◽  
Laser Energy ◽  
Good Alternative ◽  
Immersion Method ◽  
Dopant Activation ◽  
Layer Deposition ◽  
Si Films ◽  
Short Time

ABSTRACTDoping of polysilicon (poly-Si) films was performed at a low temperature (<150°C), by using three different dopant incorporation methods: ion shower, dopant layer deposition and plasma immersion. All three techniques were shown to be capable of obtaining sheet resistance values that were smaller than 104 Ω/sq., which were considered to be sufficient to form good source-drain contacts. Also, a sheet resistance value that is as low as 300 Ω/sq. was demonstrated. It was found that the laser energy used for dopant activation was the major parameter to control the sheet resistance of the poly-Si films. The lowest attainable sheet resistance was not affected much by the ion dose, as long as the initial dose is higher than 1015 cm−2. The plasma immersion method was shown to be a good alternative to the ion shower, as the doping could be performed in a relatively short time without causing a structural damage to the poly-Si film.

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