Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

2011 ◽  
Vol 32 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Yao-Jen Lee ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Ho-Ming Lin ◽  
Shich-Chuang Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystalline ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Crystalline Germanium

Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

2012 ◽  
Vol 15 (6) ◽  
pp. H185
Author(s):  
Bo-An Tsai ◽  
Chiung-Hui Lai ◽  
Bo-Shiun Lee ◽  
Chih-Wei Luo ◽  
Yao-Jen Lee
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Annealing Process ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Thermal Stability Of

Low temperature growth of single crystalline germanium nanowires

2010 ◽  
Vol 45 (2) ◽  
pp. 153-158 ◽  
Author(s):  
L.Z. Pei ◽  
H.S. Zhao ◽  
W. Tan ◽  
H.Y. Yu ◽  
Y.W. Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Growth ◽  
Single Crystalline ◽  
Germanium Nanowires ◽  
Low Temperature Growth ◽  
Crystalline Germanium

Effective dopant activation via low temperature microwave annealing of ion implanted silicon

2013 ◽  
Vol 103 (19) ◽  
pp. 192103 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Sayantan Das ◽  
Wei Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant ◽  
Ion Implanted

Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review

2014 ◽  
Vol 61 (3) ◽  
pp. 651-665 ◽  
Author(s):  
Yao-Jen Lee ◽  
Ta-Chun Cho ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Yu-Lun Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Annealing

Low-temperature soluble InZnO thin film transistors by microwave annealing

2011 ◽  
Vol 326 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Keunkyu Song ◽  
Chang Young Koo ◽  
Taehwan Jun ◽  
Daehee Lee ◽  
Youngmin Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microwave Annealing

Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

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