Dopant Activation During Solid Phase Crystallization of Poly-Si and Influence of Fluorine and Hydrogen

1997 ◽  
Vol 467 ◽  
Author(s):  
A. Kaan Kalkan ◽  
Reece M. Kingi ◽  
Stephen J. Fonash
Keyword(s):  
Low Temperature ◽  
Film Thickness ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Dopant Activation ◽  
The Impact ◽  
Ion Implanted

ABSTRACTDopant activation for ion implanted solid phase crystallized (SPC) a-Si:H films, deposited by low temperature PECVD, was investigated. The impact of film thickness, the effect of subsequent hydrogenation, and a possible role for fluorine in this process have been studied.

A 9.5-in. 1.3-Mpixel low-temperature poly-Si TFT-LCD fabricated by solid-phase crystallization of very thin films and an ECR-CVD gate insulator

1993 ◽  
Vol 1 (2) ◽  
pp. 203 ◽  
Author(s):  
Thomas W. Little ◽  
Hideki Koike ◽  
Ken-ichi Takahara ◽  
Takashi Nakazawa ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Phase ◽  
Gate Insulator ◽  
Solid Phase Crystallization

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Stress and Dopant Activation in Solid Phase Crystalized Si Films

1999 ◽  
Vol 558 ◽  
Author(s):  
A. Kaan Kalkan ◽  
Stephen J. Fonash
Keyword(s):  
Tensile Stress ◽  
Defect Density ◽  
Solid Phase ◽  
Structural Defects ◽  
Raman Shift ◽  
Solid Phase Crystallization ◽  
Dopant Activation ◽  
Defect Creation ◽  
Si Films ◽  
High Level

ABSTRACTDefect creation mechanisms during solid phase crystallization (SPC) of Si thin films were investigated with PECVD amorphous precursor samples produced with various deposition temperatures and thicknesses. These precursor films were implanted with dopant and then crystallized to obtain both SPC and dopant activation. The doping efficiency was found to decrease with the tensile stress level as measured by Raman shift. The stress shows a decrease as the precursor deposition temperature and thickness are lowered. Furthermore, a lower level of stress is induced by rapid thermal annealing when the annealing temperature is high enough to soften the glass substrate on which the films were deposited. We show that by control of stress during the SPC step, intragrain defect density can be lowered and electronic quality of the resulting polycrystalline Si films can be improved. Based on these observations, we propose the following tentative model to explain the defect creation: during SPC, tensile stress evolution is considered to result from the volumetric contraction of Si film when it transforms from the amorphous to crystalline phase. This contraction is retarded by the substrate, which imposes a tensile stress on the film. A high level of stress leads to formation of structural defects inside the grains of the resulting polycrystalline material. These defects trap carriers or complex with the dopant reducing doping efficiency.

WITHDRAWN: Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

2007 ◽  
Author(s):  
Kaoru Toko ◽  
Hiroshi Kanno ◽  
Atsushi Kenjo ◽  
Taizoh Sadoh ◽  
Tanemasa Asano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Crystallization

Ultra-Low Temperature ( 180 C) Solid-Phase Crystallization of GeSn on Insulator Triggered by Laser-Anneal Seeding

2015 ◽  
Vol 69 (5) ◽  
pp. 301-304
Author(s):  
R. Matsumura ◽  
K. Moto ◽  
Y. Kai ◽  
T. Sadoh ◽  
H. Ikenoue ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Laser Anneal
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