Dopant activation in ion implanted silicon by microwave annealing

2009 ◽  
Vol 106 (11) ◽  
pp. 114902 ◽  
Author(s):  
T. L. Alford ◽  
D. C. Thompson ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Dopant Activation ◽  
Microwave Annealing ◽  
Ion Implanted

Effective dopant activation via low temperature microwave annealing of ion implanted silicon

2013 ◽  
Vol 103 (19) ◽  
pp. 192103 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Sayantan Das ◽  
Wei Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant ◽  
Ion Implanted

scholarly journals Microwave annealing of ion implanted 6H-SiC

1996 ◽  
Author(s):  
J.A. Gardner ◽  
M.V. Rao ◽  
Y.L. Tian ◽  
O.W. Holland ◽  
G. Kelner ◽  
...  
Keyword(s):  
Microwave Annealing ◽  
Ion Implanted

scholarly journals Solid-state microwave annealing of ion-implanted 4H–SiC

2007 ◽  
Vol 261 (1-2) ◽  
pp. 616-619 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Yong-lai Tian ◽  
Mark C. Ridgway ◽  
Nadeemullah A. Mahadik ◽  
Syed B. Qadri ◽  
...  
Keyword(s):  
Solid State ◽  
Microwave Annealing ◽  
Ion Implanted

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

2011 ◽  
Vol 32 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Yao-Jen Lee ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Ho-Ming Lin ◽  
Shich-Chuang Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystalline ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Crystalline Germanium

Transient Annealing of Ion Implanted Gallium Arsenide

1982 ◽  
Vol 13 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Solid Phase ◽  
Dopant Activation ◽  
Implantation Damage ◽  
Dopant Redistribution ◽  
Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing

2009 ◽  
Author(s):  
K. Hara ◽  
Y. Tanushi ◽  
S. Kuroki ◽  
K. Kotani ◽  
T. Ito
Keyword(s):  
Microwave Annealing ◽  
Ion Implanted
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