Charge storage properties of InP quantum dots in GaAs metal-oxide-semiconductor based nonvolatile flash memory devices

2012 ◽  
Vol 101 (21) ◽  
pp. 212108 ◽  
Author(s):  
Souvik Kundu ◽  
Nripendra N. Halder ◽  
Pranab Biswas ◽  
D. Biswas ◽  
P. Banerji ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Flash Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Storage ◽  
Memory Devices ◽  
Storage Properties ◽  
Inp Quantum Dots

GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

2013 ◽  
Vol 114 (8) ◽  
pp. 084509 ◽  
Author(s):  
Souvik Kundu ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Nripendra. N Halder ◽  
Pranab Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Zno Quantum Dots

GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications

2013 ◽  
Vol 102 (5) ◽  
pp. 053117 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand ◽  
C. Bonafos ◽  
E. Papadomanolaki ◽  
E. Iliopoulos
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Storage ◽  
Semiconductor Structures

High Density Metal Oxide (ZnO) Nanopatterned Platforms for Electronic Applications

2013 ◽  
Vol 1498 ◽  
pp. 255-261
Author(s):  
Vignesh Suresh ◽  
Meiyu Stella Huang ◽  
Madapusi.P. Srinivasan ◽  
Sivashankar Krishnamoorthy
Keyword(s):  
Block Copolymer ◽  
Metal Oxide ◽  
Flash Memory ◽  
Nanoimprint Lithography ◽  
Rf Sputtering ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Charge Storage ◽  
Operating Voltage ◽  
Mos Capacitor

ABSTRACTFabrication methodologies with high precision and tenability for nanostructures of metal and metal oxides are widely explored for engineering devices such as solar cells, sensors, non-volatile memories (NVM) etc. In this direction, metal and metal oxide nanopatterned arrays are the state-of-the-art platforms upon which the device structures are built where the tunable orderly arrangement of the nanostructures enhances the device performance. We describe here a coalition of fabrication protocols that employ block copolymer self-assembly and nanoimprint lithography (NIL) to obtain metal oxide nanopatterns with sub-100 nm spatial resolution. The protocols are easily scalable down to sub-50 nm and below.Nanopatterned arrays of ZnO created by using NIL assisted templates through area selective atomic layer deposition (ALD) and radio frequency (RF) sputtering find application in NVM and photovoltaics. We have employed NIL that produced nanoporous polymer templates using Si molds derived from block copolymer lithography (BCL) for pattern transfer into ZnO. The resulting ZnO nanoarrays were highly dense (8.6 x 109 nanofeatures per cm2) exhibiting periodic feature to feature spacing and width that replicated the geometric attributes of the template. Such nanopatterns find application in NVM, where a change in the density and periodicity of the arrays influences the charge storage characteristics. The above assembly and patterning protocols were employed to fabricate metal-oxide-semiconductor (MOS) capacitor devices for investigating application in NVM. Patterned ZnO nanoarrays were used as charge storage centres for the MOS capacitor devices. Preliminary results upon investigating the flash memory performance showed good flat-band voltage hysteresis window at a relatively low operating voltage due to high charge trap density.

Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures

2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ04 ◽  
Author(s):  
Naoya Morisawa ◽  
Mitsuhisa Ikeda ◽  
Sho Nakanishi ◽  
Akira Kawanami ◽  
Katsunori Makihara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Carrier Transfer ◽  
Semiconductor Structures ◽  
Si Quantum Dots

Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector

2009 ◽  
Vol 94 (24) ◽  
pp. 241108 ◽  
Author(s):  
Jia-Min Shieh ◽  
Wen-Chien Yu ◽  
Jung Y. Huang ◽  
Chao-Kei Wang ◽  
Bau-Tong Dai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Near Infrared ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Quantum Dots ◽  
Effect Transistor
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