Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Juan Wang; Guo-Wei Wang; Ying-Qiang Xu; Jun-Liang Xing; Wei Xiang; Bao Tang; Yan Zhu; Zheng-Wei Ren; Zhen-Hong He; Zhi-Chuan Niu

doi:10.1063/1.4811443

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Journal of Applied Physics ◽

10.1063/1.4811443 ◽

2013 ◽

Vol 114 (1) ◽

pp. 013704 ◽

Cited By ~ 4

Author(s):

Juan Wang ◽

Guo-Wei Wang ◽

Ying-Qiang Xu ◽

Jun-Liang Xing ◽

Wei Xiang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structure

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Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00897-4 ◽

1997 ◽

Vol 177 (1-2) ◽

pp. 28-32

Author(s):

H.G. Lee ◽

S.K. Hong ◽

S.G. Kim ◽

K.S. Lee ◽

H.M. Kim ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Lattice Matched

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1387454 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1515 ◽

Cited By ~ 9

Author(s):

I. Watanabe ◽

K. Kanzaki ◽

T. Aoki ◽

T. Kitada ◽

S. Shimomura ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Electron Mobility ◽

Molecular Beam ◽

Impurity Scattering ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility

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Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00412-5 ◽

1996 ◽

Vol 169 (3) ◽

pp. 435-442 ◽

Cited By ~ 4

Author(s):

Sang-Ki Hong ◽

Hae-Gwon Lee ◽

Jae-Jin Lee ◽

Sang-Gi Kim ◽

Kwang-Eui Pyun ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Channel Conductivity

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Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.2189607 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132108 ◽

Cited By ~ 7

Author(s):

Soo-Ghang Ihn ◽

Seong June Jo ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption

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Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP High-Electron-Mobility Structures on GaAs Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1004 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 1004-1007 ◽

Cited By ~ 14

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Makoto Kudo ◽

Hiroshi Ohta

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Gas Source ◽

Gaas Substrates

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Molecular-beam epitaxy growth of InGaAs–InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1379793 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1524 ◽

Cited By ~ 2

Author(s):

E. Skuras ◽

G. Pennelli ◽

A. R. Long ◽

C. R. Stanley

Keyword(s):

Molecular Beam Epitaxy ◽

Surface Potential ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Electron Densities ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1807023 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4043-4045 ◽

Cited By ~ 6

Author(s):

T. Kitada ◽

T. Aoki ◽

I. Watanabe ◽

S. Shimomura ◽

S. Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Inp Substrates

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High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Cited By ~ 43

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1481751 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1200 ◽

Cited By ~ 7

Author(s):

O. Baklenov ◽

D. Lubyshev ◽

Y. Wu ◽

X.-M. Fang ◽

J. M. Fastenau ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Large Diameter ◽

High Electron Mobility Transistor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

High Electron ◽

High Electron Mobility

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