Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

2002 ◽  
Vol 20 (3) ◽  
pp. 1200 ◽  
Author(s):  
O. Baklenov ◽  
D. Lubyshev ◽  
Y. Wu ◽  
X.-M. Fang ◽  
J. M. Fastenau ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Large Diameter ◽  
High Electron Mobility Transistor ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
High Electron ◽  
High Electron Mobility

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1010 ◽  
Author(s):  
Ahmed Alyamani ◽  
Evgenii V. Lutsenko ◽  
Mikalai V. Rzheutski ◽  
Vitaly Z. Zubialevich ◽  
Aliaksei G. Vainilovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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