Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

2001 ◽  
Vol 19 (4) ◽  
pp. 1515 ◽  
Author(s):  
I. Watanabe ◽  
K. Kanzaki ◽  
T. Aoki ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Impurity Scattering ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1010 ◽  
Author(s):  
Ahmed Alyamani ◽  
Evgenii V. Lutsenko ◽  
Mikalai V. Rzheutski ◽  
Vitaly Z. Zubialevich ◽  
Aliaksei G. Vainilovich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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