High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

1999 ◽  
Vol 75 (23) ◽  
pp. 3653-3655 ◽  
Author(s):  
M. J. Murphy ◽  
K. Chu ◽  
H. Wu ◽  
W. Yeo ◽  
W. J. Schaff ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
High Frequency ◽  
Molecular Beam ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

2012 ◽  
Vol 5 (9) ◽  
pp. 091003 ◽  
Author(s):  
Nethaji Dharmarasu ◽  
K. Radhakrishnan ◽  
Manvi Agrawal ◽  
Lingaparthi Ravikiran ◽  
Subramaniam Arulkumaran ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
Sign in / Sign up

Export Citation Format

Share Document