Temperature dependence of electron mobility for inversion‐mode InP metal‐insulator‐semiconductor field‐effect transistors

1987 ◽  
Vol 61 (1) ◽  
pp. 277-283 ◽  
Author(s):  
Y. Hirota ◽  
M. Okamura ◽  
T. Hisaki ◽  
E. Yamaguchi
Keyword(s):  
Temperature Dependence ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Inversion Mode

Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

2011 ◽  
Vol 88 (12) ◽  
pp. 3459-3461 ◽  
Author(s):  
Noriyuki Miyata ◽  
Hiroyuki Ishii ◽  
Yuji Urabe ◽  
Taro Itatani ◽  
Tetsuji Yasuda ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

2013 ◽  
Vol 102 (23) ◽  
pp. 232107 ◽  
Author(s):  
Choong Hyun Lee ◽  
Tomonori Nishimura ◽  
Toshiyuki Tabata ◽  
DanDan Zhao ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

2009 ◽  
Vol 2 (12) ◽  
pp. 121101 ◽  
Author(s):  
Hiroyuki Ishii ◽  
Noriyuki Miyata ◽  
Yuji Urabe ◽  
Taro Itatani ◽  
Tetsuji Yasuda ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

2003 ◽  
Vol 65 (4) ◽  
pp. 447-453 ◽  
Author(s):  
Kazuyoshi Torii ◽  
Yasuhiro Shimamoto ◽  
Shin-ichi Saito ◽  
Katsunori Obata ◽  
Tsuyoshi Yamauchi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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