Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors

Y. Iwase; F. Arai; T. Sugano

doi:10.1063/1.99858

Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.99858 ◽

1988 ◽

Vol 53 (7) ◽

pp. 565-567 ◽

Cited By ~ 4

Author(s):

Y. Iwase ◽

F. Arai ◽

T. Sugano

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Effective Electron ◽

Metal Insulator Semiconductor

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Temperature dependence of electron mobility for inversion‐mode InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.338817 ◽

1987 ◽

Vol 61 (1) ◽

pp. 277-283 ◽

Cited By ~ 5

Author(s):

Y. Hirota ◽

M. Okamura ◽

T. Hisaki ◽

E. Yamaguchi

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode

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Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

Microelectronic Engineering ◽

10.1016/j.mee.2010.10.024 ◽

2011 ◽

Vol 88 (12) ◽

pp. 3459-3461 ◽

Cited By ~ 8

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Yuji Urabe ◽

Taro Itatani ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4810002 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232107 ◽

Cited By ~ 25

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

DanDan Zhao ◽

Kosuke Nagashio ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2015.07.007 ◽

2015 ◽

Vol 114 ◽

pp. 30-34 ◽

Cited By ~ 7

Author(s):

J.M. Gonzalez-Medina ◽

F.G. Ruiz ◽

E.G. Marin ◽

A. Godoy ◽

F. Gámiz

Keyword(s):

Simulation Study ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

Applied Physics Express ◽

10.1143/apex.2.121101 ◽

2009 ◽

Vol 2 (12) ◽

pp. 121101 ◽

Cited By ~ 43

Author(s):

Hiroyuki Ishii ◽

Noriyuki Miyata ◽

Yuji Urabe ◽

Taro Itatani ◽

Tetsuji Yasuda ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor

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Film deposition temperature dependence of electron mobility for accumulation‐mode InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.343029 ◽

1989 ◽

Vol 65 (3) ◽

pp. 1328-1337 ◽

Cited By ~ 11

Author(s):

Y. Hirota ◽

M. Okamura ◽

E. Yamaguchi ◽

T. Hisaki

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Deposition Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Film Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Accumulation Mode

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High Electron Mobility Ge n-Channel Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

Applied Physics Express ◽

10.1143/apex.3.061301 ◽

2010 ◽

Vol 3 (6) ◽

pp. 061301 ◽

Cited By ~ 16

Author(s):

Tatsuro Maeda ◽

Yukinori Morita ◽

Shinichi Takagi

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Diffusion Technique

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Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

Microelectronic Engineering ◽

10.1016/s0167-9317(03)00163-1 ◽

2003 ◽

Vol 65 (4) ◽

pp. 447-453 ◽

Cited By ~ 19

Author(s):

Kazuyoshi Torii ◽

Yasuhiro Shimamoto ◽

Shin-ichi Saito ◽

Katsunori Obata ◽

Tsuyoshi Yamauchi ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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