Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films

2013 ◽  
Vol 113 (13) ◽  
pp. 133101 ◽  
Author(s):  
Yingrui Sui ◽  
Bin Yao ◽  
Li Xiao ◽  
Guozhong Xing ◽  
Lili Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Zno Films ◽  
Acceptor Doping ◽  
Conduction Behavior ◽  
P Type ◽  
Type Conduction

Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO films

2013 ◽  
Vol 138 (3) ◽  
pp. 034704 ◽  
Author(s):  
Jichao Li ◽  
Yongfeng Li ◽  
Bin Yao ◽  
Ying Xu ◽  
Shiwang Long ◽  
...  
Keyword(s):  
Zno Films ◽  
Conduction Behavior ◽  
Chemical States ◽  
Doped Zno ◽  
P Type ◽  
Phosphorus Doped ◽  
Type Conduction

Influence of Ag–S codoping on silver chemical states and stable p-type conduction behavior of the ZnO films

2014 ◽  
Vol 40 (1) ◽  
pp. 2161-2167 ◽  
Author(s):  
Y. Xu ◽  
T. Yang ◽  
B. Yao ◽  
Y.F. Li ◽  
Z.H. Ding ◽  
...  
Keyword(s):  
Zno Films ◽  
Conduction Behavior ◽  
Chemical States ◽  
P Type ◽  
Type Conduction

Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation

2007 ◽  
Vol 102 (2) ◽  
pp. 023517 ◽  
Author(s):  
Kwang-Soon Ahn ◽  
Todd Deutsch ◽  
Yanfa Yan ◽  
Chun-Sheng Jiang ◽  
Craig L. Perkins ◽  
...  
Keyword(s):  
Band Gap ◽  
Zno Films ◽  
P Type

scholarly journals Progress in ZnO Acceptor Doping: What Is the Best Strategy?

2014 ◽  
Vol 2014 ◽  
pp. 1-15 ◽  
Author(s):  
Judith G. Reynolds ◽  
C. Lewis Reynolds
Keyword(s):  
Theoretical Calculations ◽  
Acceptor Doping ◽  
Deep Acceptor ◽  
Defect Complexes ◽  
Impurity Species ◽  
Dopant Impurity ◽  
P Type ◽  
Type Conduction ◽  
Oxygen Site ◽  
Zinc Site

This paper reviews the recent progress in acceptor doping of ZnO that has been achieved with a focus toward the optimum strategy. There are three main approaches for generating p-type ZnO: substitutional group IA elements on a zinc site, codoping of donors and acceptors, and substitution of group VA elements on an oxygen site. The relevant issues are whether there is sufficient incorporation of the appropriate dopant impurity species, does it reside on the appropriate lattice site, and lastly whether the acceptor ionization energy is sufficiently small to enable significant p-type conduction at room temperature. The potential of nitrogen doping and formation of the appropriate acceptor complexes is highlighted although theoretical calculations predict that nitrogen on an oxygen site is a deep acceptor. We show that an understanding of the growth and annealing steps to achieve the relevant acceptor defect complexes is crucial to meet requirements.

p-Type conduction in Al–N co-doped ZnO films

2004 ◽  
Vol 58 (29) ◽  
pp. 3741-3744 ◽  
Author(s):  
Guodong Yuan ◽  
Zhizhen Ye ◽  
Liping Zhu ◽  
Yujia Zeng ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Zno Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction ◽  
Co Doped

Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

2007 ◽  
Vol 22 (10) ◽  
pp. 2668-2675 ◽  
Author(s):  
Z.W. Liu ◽  
S.W. Yeo ◽  
C.K. Ong
Keyword(s):  
Hole Concentration ◽  
Film Structure ◽  
Zno Films ◽  
Zno Film ◽  
Annealing Conditions ◽  
Zinc Nitride ◽  
Alternative Approach ◽  
Oxidative Annealing ◽  
P Type ◽  
Type Conduction

N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400–600 °C for 10–60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021–1022 cm−3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm−3, whereas the p-type ZnO:N films had hole concentrations of 1014–1016 cm−3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm−3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source.

Optical and Electrical Properties of P-Type N-Doped ZnO Film

2014 ◽  
Vol 609-610 ◽  
pp. 113-117
Author(s):  
Ya Juan Sun ◽  
Wan Xing Wang
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Band Gap ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
High Quality ◽  
Doped Zno ◽  
P Type

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

PROPERTIES OF GaN-DOPED ZnO THIN FILMS PREPARED BY PULSED LASER DEPOSITION

2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.

Transparent p- and n-Type Conductive Oxides With Delafossite Structure

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Shuntaro Ibuki ◽  
Tomomi Hase ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Delafossite Structure ◽  
P Type ◽  
Type Conduction

AbstractThin films of CuAlO2, CuGaO2 and AglnO2 with delafossite structure were prepared on sapphire substrates by pulsed laser deposition method. The resulting CuA102 thin films exhibited p-type conduction and the electrical conductivity at room temperature was 0.3 Scm−1. CuGaO2 thin films were grown epitaxially on μ-Al2O3 (001) surface and showed p-type conduction (conductivity at room temperature = 0.06 S cm−1). The optical band gap was estimated to be ∼3.5 eV for CuAlO2 or ∼3.6 eV for CuGaO2. On the other hand, the thin film of Sn doped AglnO2 exhibited n-type conduction. The optical band gap and electrical conductivity at room temperature were ∼4.1 eV and 70 S cm−1, respectively. The recent work demonstrates the validity of our chemical design concept for p- and n-type transparent conducting oxides, providing an opportunity for realization of transparent p-n junction using delafossite-type oxides.

scholarly journals Defect Structure of the Mixed-Conducting Sr-Fe-Co-O System

1996 ◽  
Vol 453 ◽  
Author(s):  
B. Ma ◽  
U. Balachandran ◽  
C.-C. Chao ◽  
J.-H. Park
Keyword(s):  
Activation Energy ◽  
Defect Structure ◽  
Elevated Temperatures ◽  
Ionic Conductivities ◽  
Transition Metal Ions ◽  
Partial Pressures ◽  
Conduction Behavior ◽  
Increasing Temperature ◽  
P Type ◽  
Type Conduction

AbstractElectrical conductivity of the mixed-conducting Sr-Fe-Co-O system was investigated at elevated temperatures and various oxygen partial pressures (pO2). The system exhibits not only high combined electrical and oxygen ionic conductivities but also structural stability in both oxidizing and reducing environments. The conductivity of SrFeCo0.5Ox increases with increasing temperature and increasing pO2, within our experimental pO2 range (1 ≥ pO2 ≥ 1O-18 atm). p-type conduction behavior was observed. The activation energy of which increases with decreasing pO2. A model of the defect chemistry in the Sr-Fe-Co-O system is proposed. The pO2-dependent conducting behavior can be understood by considering the trivalent-to-divalent transition of the transition metal ions in the system.

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