Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation

2007 ◽  
Vol 102 (2) ◽  
pp. 023517 ◽  
Author(s):  
Kwang-Soon Ahn ◽  
Todd Deutsch ◽  
Yanfa Yan ◽  
Chun-Sheng Jiang ◽  
Craig L. Perkins ◽  
...  
Keyword(s):  
Band Gap ◽  
Zno Films ◽  
P Type

Optical and Electrical Properties of P-Type N-Doped ZnO Film

2014 ◽  
Vol 609-610 ◽  
pp. 113-117
Author(s):  
Ya Juan Sun ◽  
Wan Xing Wang
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Band Gap ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
High Quality ◽  
Doped Zno ◽  
P Type

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NOis lower than that of substitutional POand AsO.Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2and N2mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×10181/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films

2013 ◽  
Vol 113 (13) ◽  
pp. 133101 ◽  
Author(s):  
Yingrui Sui ◽  
Bin Yao ◽  
Li Xiao ◽  
Guozhong Xing ◽  
Lili Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Zno Films ◽  
Acceptor Doping ◽  
Conduction Behavior ◽  
P Type ◽  
Type Conduction

Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation

2021 ◽  
Vol 125 (13) ◽  
pp. 7495-7501
Author(s):  
Gang Wang ◽  
Jinju Zheng ◽  
Boyi Xu ◽  
Chaonan Zhang ◽  
Yue Zhu ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Band Gap ◽  
Band Edge ◽  
Electronic Band ◽  
Electronic Band Gap ◽  
P Type

scholarly journals Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Phase ◽  
Structural Disorder ◽  
Energy Band Gap ◽  
Nitrogen Doped ◽  
Nio Thin Film ◽  
Direct Band ◽  
Output Characteristics ◽  
Indirect Band Gap ◽  
P Type

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Wide band gap and p-type conductive Cu-Nb-O films

2011 ◽  
Vol 5 (4) ◽  
pp. 153-155 ◽  
Author(s):  
Seiji Yamazoe ◽  
Shunsuke Yanagimoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

2016 ◽  
Vol 100 ◽  
pp. 468-473 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Annealing Process ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

Wide Band Gap Al and In Co-doped ZnO Films for Near-Infrared Plasmonic Application

Plasmonics ◽  
2021 ◽  
Author(s):  
Soumya Kannoth ◽  
Packia Selvam Irulappan ◽  
Sandip Dhara ◽  
Sankara Narayanan Potty
Keyword(s):  
Band Gap ◽  
Near Infrared ◽  
Wide Band ◽  
Zno Films ◽  
Wide Band Gap ◽  
Doped Zno ◽  
Co Doped

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 25 (9) ◽  
pp. 3400-3402 ◽  
Author(s):  
Wang Jing-Wei ◽  
Bian Ji-Ming ◽  
Liang Hong-Wei ◽  
Sun Jing-Chang ◽  
Zhao Jian-Ze ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Ultrasonic Spray ◽  
P Type
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