Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO films

2013 ◽  
Vol 138 (3) ◽  
pp. 034704 ◽  
Author(s):  
Jichao Li ◽  
Yongfeng Li ◽  
Bin Yao ◽  
Ying Xu ◽  
Shiwang Long ◽  
...  
2014 ◽  
Vol 40 (1) ◽  
pp. 2161-2167 ◽  
Author(s):  
Y. Xu ◽  
T. Yang ◽  
B. Yao ◽  
Y.F. Li ◽  
Z.H. Ding ◽  
...  

2009 ◽  
Vol 26 (9) ◽  
pp. 098101 ◽  
Author(s):  
Li Xiang-Ping ◽  
Zhang Bao-Lin ◽  
Guan He-Song ◽  
Shen Ren-Sheng ◽  
Peng Xin-Cun ◽  
...  

2007 ◽  
Vol 41 (2) ◽  
pp. 025103 ◽  
Author(s):  
A Allenic ◽  
W Guo ◽  
Y B Chen ◽  
Y Che ◽  
Z D Hu ◽  
...  

2004 ◽  
Vol 58 (29) ◽  
pp. 3741-3744 ◽  
Author(s):  
Guodong Yuan ◽  
Zhizhen Ye ◽  
Liping Zhu ◽  
Yujia Zeng ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
P Type ◽  

2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.


2010 ◽  
Vol 24 (15n16) ◽  
pp. 2992-2998 ◽  
Author(s):  
C.-W. ZOU ◽  
R.-Q. CHEN ◽  
E. HAEMMERLE ◽  
W. GAO

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.


2006 ◽  
Vol 252 (22) ◽  
pp. 7953-7956 ◽  
Author(s):  
Yan Miao ◽  
Zhizhen Ye ◽  
Weizhong Xu ◽  
Fugang Chen ◽  
Xincui Zhou ◽  
...  

2013 ◽  
Vol 113 (13) ◽  
pp. 133101 ◽  
Author(s):  
Yingrui Sui ◽  
Bin Yao ◽  
Li Xiao ◽  
Guozhong Xing ◽  
Lili Yang ◽  
...  

2018 ◽  
Vol 44 (6) ◽  
pp. 7172-7179 ◽  
Author(s):  
Guojian Li ◽  
Huimin Wang ◽  
Yang Gao ◽  
Shiying Liu ◽  
Renxiu Tian ◽  
...  

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