Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

2013 ◽  
Vol 113 (5) ◽  
pp. 053103 ◽  
Author(s):  
M. I. Hossain ◽  
Z. Ikonic ◽  
J. Watson ◽  
J. Shao ◽  
P. Harrison ◽  
...  
2013 ◽  
Vol 1509 ◽  
Author(s):  
M. I. Hossain ◽  
Z. Ikonic ◽  
J. Watson ◽  
J. Shao ◽  
P. Harrison ◽  
...  

ABSTRACTWe performed a thorough investigation of mid-infrared heavy-to-light hole intersubband absorption in the valence band of p-doped GaAs quantum wells with AlAs barriers. For the p-type doping a high-purity solid carbon source was used. The experimental results are compared with theoretical simulations. The inclusion of layer inter-diffusion well reproduces the transition energies. We estimate a 6-10 Å inter-diffusion length that is consistent with electron microscopy measurements. A careful analysis of our results provides valuable information for further design of emitters and detectors based on hole intersubband transitions in the valence band.


2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.


2005 ◽  
Vol 98 (4) ◽  
pp. 044501 ◽  
Author(s):  
T. Fromherz ◽  
M. Meduňa ◽  
G. Bauer ◽  
A. Borak ◽  
C. V. Falub ◽  
...  

2013 ◽  
Vol 1490 ◽  
pp. 75-81 ◽  
Author(s):  
Thomas C. Chasapis ◽  
Yeseul Lee ◽  
Georgios S. Polymeris ◽  
Eleni C. Stefanaki ◽  
Euripides Hatzikraniotis ◽  
...  

ABSTRACTWe investigated the valence band structure of PbSe by a combined study of the optical and transport properties of p-type Pb1-xNaxSe, with Na concentrations ranging from 0 – 4%, yielding carrier densities in a wide range of 1018 – 1020 cm−3. Room temperature infrared reflectivity studies showed that the susceptibility (or conductivity) effective mass m* increases from ∼ 0.06mo to ∼ 0.5mo on increasing Na content from 0.08% to 3%. The Seebeck coefficient scales with doping in the whole temperature range, yielding lower values for higher Na contents, while the Hall coefficient increases on heating from room temperature showing a peak close to 650 K. The room temperature Pisarenko plot is well described by the simple parabolic band model up to ∼ 1·1020 cm−3. In order to describe the behaviour in the whole concentration range, the application of the two band model, i.e. light hole and heavy hole, was used giving density of states effective masses 0.28mo and 2.5mo for the two bands respectively.


2005 ◽  
Vol 87 (9) ◽  
pp. 091116 ◽  
Author(s):  
Oana Malis ◽  
Loren N. Pfeiffer ◽  
Kenneth W. West ◽  
A. Michael Sergent ◽  
Claire Gmachl

2014 ◽  
Vol 29 (4) ◽  
pp. 045008
Author(s):  
A I Yakimov ◽  
V V Kirienko ◽  
V A Armbrister ◽  
A A Bloshkin

1990 ◽  
Vol 57 (10) ◽  
pp. 957-959 ◽  
Author(s):  
J.‐P. Reithmaier ◽  
R. Höger ◽  
H. Riechert ◽  
P. Hiergeist ◽  
G. Abstreiter

2006 ◽  
Vol 89 (25) ◽  
pp. 251107 ◽  
Author(s):  
Hideo Kawanishi ◽  
Eiichiro Niikura ◽  
Mao Yamamoto ◽  
Shoichiro Takeda

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
D. P. Samajdar ◽  
S. Dhar

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies inInAs1-xBixandInSb1-xBixalloy systems. It is found that both the heavy/light hole, and spin-orbit splitE+levels move upwards in energy with an increase in Bi content in the alloy, whereas the splitE−energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.


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