Особенности спектров люминесценции ZnSе · О с привлечением теории антипересекающихся зон

Investigations are presented in the light of the band anticrossing theory (ВАС) of the influence on the emission spectra of the structural features self-activated zinc selenide and crystals with activators. The disunity of numerous literature data makes it difficult to understand this question. Theory-ВAС requires taking into account the influence of isoelectronic admixture of oxygen, which is invariably present in the ZnSе lattice, on the zone structure. Improvement of methods for calcu-lating the equilibrium of intrinsic point defects (STD) intendes use of these data in the analysis of the optical properties of АIIВVI, in particular zinc selenide.The aim of thе work was to re-veal the features and nature of individual luminescence bands that are widely used to obtain information on the quality of crystals.For this, the spectra of photo, cathode, pulsed lumines-cence, excitation, and stimulated emission of ZnSе are investigated in a single context with the use of these features. Stable states of crystals with stacking faults were revealed upon introduc-tion of activators or background copper impurity. The data are of interest for the diagnostics of crystals that are useful for creating lasers.

Electronic properties and band offsets in InP(1−x−y)BixNy

Electronic band structures of [Formula: see text] have been theoretically studied by using Conduction Band Anticrossing (CBAC) model and Valence Band Anticrossing model (VBAC) in conjugation with [Formula: see text] method. This mathematical model’s manifestation is a 16 band Hamiltonian matrix. Our results reveal that the addition of Bi and N to InP causes substantial reduction of band gap, and the conduction band offset is greater than valence band offset. It can provide better electronic confinement and improve the temperature-insensitive characteristics for optoelectronic devices. Material compositions and band gap under various strain conditions have also been added in our calculation. By adjusting the concentration of Bi and N, we obtained a strong control of conduction band edge and valence band edge, which increases the flexibility of design InPBiN/InP structures.